JPS57199224A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57199224A JPS57199224A JP56084758A JP8475881A JPS57199224A JP S57199224 A JPS57199224 A JP S57199224A JP 56084758 A JP56084758 A JP 56084758A JP 8475881 A JP8475881 A JP 8475881A JP S57199224 A JPS57199224 A JP S57199224A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon nitride
- glass layer
- melting point
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/60—
-
- H10P14/69433—
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084758A JPS57199224A (en) | 1981-06-02 | 1981-06-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084758A JPS57199224A (en) | 1981-06-02 | 1981-06-02 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57199224A true JPS57199224A (en) | 1982-12-07 |
| JPS6356704B2 JPS6356704B2 (OSRAM) | 1988-11-09 |
Family
ID=13839577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56084758A Granted JPS57199224A (en) | 1981-06-02 | 1981-06-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57199224A (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2625839A1 (fr) * | 1988-01-13 | 1989-07-13 | Sgs Thomson Microelectronics | Procede de passivation d'un circuit integre |
| EP1237182A3 (en) * | 2001-02-19 | 2002-10-02 | Applied Materials, Inc. | Aggregate dielectric layer to reduce nitride consumption |
| JP2006043813A (ja) * | 2004-08-04 | 2006-02-16 | Denso Corp | 保護膜付きマイクロシステム構造体及びその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5390869A (en) * | 1977-01-21 | 1978-08-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5632732A (en) * | 1979-08-27 | 1981-04-02 | Mitsubishi Electric Corp | Semiconductor device |
-
1981
- 1981-06-02 JP JP56084758A patent/JPS57199224A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5390869A (en) * | 1977-01-21 | 1978-08-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5632732A (en) * | 1979-08-27 | 1981-04-02 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2625839A1 (fr) * | 1988-01-13 | 1989-07-13 | Sgs Thomson Microelectronics | Procede de passivation d'un circuit integre |
| EP1237182A3 (en) * | 2001-02-19 | 2002-10-02 | Applied Materials, Inc. | Aggregate dielectric layer to reduce nitride consumption |
| US6514882B2 (en) | 2001-02-19 | 2003-02-04 | Applied Materials, Inc. | Aggregate dielectric layer to reduce nitride consumption |
| SG97230A1 (en) * | 2001-02-19 | 2003-07-18 | Applied Materials Inc | Aggregate dielectric layer to reduce nitride consumption |
| JP2006043813A (ja) * | 2004-08-04 | 2006-02-16 | Denso Corp | 保護膜付きマイクロシステム構造体及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6356704B2 (OSRAM) | 1988-11-09 |
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