JPS57124444A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57124444A
JPS57124444A JP56009998A JP999881A JPS57124444A JP S57124444 A JPS57124444 A JP S57124444A JP 56009998 A JP56009998 A JP 56009998A JP 999881 A JP999881 A JP 999881A JP S57124444 A JPS57124444 A JP S57124444A
Authority
JP
Japan
Prior art keywords
semiconductor device
serviceable
deterioration
extent
silicate glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56009998A
Other languages
Japanese (ja)
Inventor
Masanori Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56009998A priority Critical patent/JPS57124444A/en
Publication of JPS57124444A publication Critical patent/JPS57124444A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent semiconductor device properties from deterioration to the extent where the device remains virtually serviceable by a method wherein two protective films respectively of P silicate glass and Si nitride are formed on the upper surface of a semiconductor chip wiring layer except where a through hole is provided. CONSTITUTION:A metal wiring 2 is built on an MOS type semiconductor substrate 1, whereupon a 0.1-1.0mum thick P silicate glass layer 3 containing 1- 6mol% of P glasses is formed. Then a 0.3-1.0mum Si nitride film 4 is piled thereon, using the plasma CVD technique. This procedure prevents the semiconductor device from deterioration as to its properties to the extent where it remains virtually serviceable thanks to barrier effect created against such contaminants as Na and the like.
JP56009998A 1981-01-26 1981-01-26 Semiconductor device Pending JPS57124444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56009998A JPS57124444A (en) 1981-01-26 1981-01-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56009998A JPS57124444A (en) 1981-01-26 1981-01-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57124444A true JPS57124444A (en) 1982-08-03

Family

ID=11735506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56009998A Pending JPS57124444A (en) 1981-01-26 1981-01-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124444A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194631A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194631A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Manufacture of semiconductor device

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