JPS57198667A - Light receiving element - Google Patents

Light receiving element

Info

Publication number
JPS57198667A
JPS57198667A JP56083997A JP8399781A JPS57198667A JP S57198667 A JPS57198667 A JP S57198667A JP 56083997 A JP56083997 A JP 56083997A JP 8399781 A JP8399781 A JP 8399781A JP S57198667 A JPS57198667 A JP S57198667A
Authority
JP
Japan
Prior art keywords
region
layer
light receiving
type
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56083997A
Other languages
English (en)
Other versions
JPH0157509B2 (ja
Inventor
Yasuo Baba
Haruo Kawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56083997A priority Critical patent/JPS57198667A/ja
Publication of JPS57198667A publication Critical patent/JPS57198667A/ja
Publication of JPH0157509B2 publication Critical patent/JPH0157509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP56083997A 1981-06-01 1981-06-01 Light receiving element Granted JPS57198667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56083997A JPS57198667A (en) 1981-06-01 1981-06-01 Light receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56083997A JPS57198667A (en) 1981-06-01 1981-06-01 Light receiving element

Publications (2)

Publication Number Publication Date
JPS57198667A true JPS57198667A (en) 1982-12-06
JPH0157509B2 JPH0157509B2 (ja) 1989-12-06

Family

ID=13818168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56083997A Granted JPS57198667A (en) 1981-06-01 1981-06-01 Light receiving element

Country Status (1)

Country Link
JP (1) JPS57198667A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173880A (ja) * 1984-02-20 1985-09-07 Nec Corp 半導体受光素子およびその製造方法
JPS6285477A (ja) * 1985-10-09 1987-04-18 Hitachi Ltd 光半導体装置
EP0242298A2 (en) * 1986-04-15 1987-10-21 Fujitsu Limited Avalanche photo-diode
US4914494A (en) * 1987-07-17 1990-04-03 Rca Inc. Avalanche photodiode with central zone in active and absorptive layers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939237A (ja) * 1972-08-22 1974-04-12
JPS5199492A (en) * 1975-02-28 1976-09-02 Fujitsu Ltd Abaranshe fuotodaioodo
JPS5642385A (en) * 1979-09-12 1981-04-20 Nec Corp Hetero-structure semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939237A (ja) * 1972-08-22 1974-04-12
JPS5199492A (en) * 1975-02-28 1976-09-02 Fujitsu Ltd Abaranshe fuotodaioodo
JPS5642385A (en) * 1979-09-12 1981-04-20 Nec Corp Hetero-structure semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173880A (ja) * 1984-02-20 1985-09-07 Nec Corp 半導体受光素子およびその製造方法
JPS6285477A (ja) * 1985-10-09 1987-04-18 Hitachi Ltd 光半導体装置
EP0242298A2 (en) * 1986-04-15 1987-10-21 Fujitsu Limited Avalanche photo-diode
US4935795A (en) * 1986-04-15 1990-06-19 Fujitsu Limited Avalanche photodiode with uniform avalanche multiplication
US4914494A (en) * 1987-07-17 1990-04-03 Rca Inc. Avalanche photodiode with central zone in active and absorptive layers

Also Published As

Publication number Publication date
JPH0157509B2 (ja) 1989-12-06

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