JPS57197863A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57197863A
JPS57197863A JP57059529A JP5952982A JPS57197863A JP S57197863 A JPS57197863 A JP S57197863A JP 57059529 A JP57059529 A JP 57059529A JP 5952982 A JP5952982 A JP 5952982A JP S57197863 A JPS57197863 A JP S57197863A
Authority
JP
Japan
Prior art keywords
electrode
type
collector
shaped
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57059529A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331109B2 (enrdf_load_stackoverflow
Inventor
Koichiro Satonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57059529A priority Critical patent/JPS57197863A/ja
Publication of JPS57197863A publication Critical patent/JPS57197863A/ja
Publication of JPS6331109B2 publication Critical patent/JPS6331109B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP57059529A 1982-04-12 1982-04-12 Semiconductor integrated circuit device Granted JPS57197863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57059529A JPS57197863A (en) 1982-04-12 1982-04-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57059529A JPS57197863A (en) 1982-04-12 1982-04-12 Semiconductor integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49138411A Division JPS5165585A (enrdf_load_stackoverflow) 1974-12-04 1974-12-04

Publications (2)

Publication Number Publication Date
JPS57197863A true JPS57197863A (en) 1982-12-04
JPS6331109B2 JPS6331109B2 (enrdf_load_stackoverflow) 1988-06-22

Family

ID=13115888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57059529A Granted JPS57197863A (en) 1982-04-12 1982-04-12 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57197863A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098669A (ja) * 1983-11-02 1985-06-01 Sanyo Electric Co Ltd パワ−トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098669A (ja) * 1983-11-02 1985-06-01 Sanyo Electric Co Ltd パワ−トランジスタ

Also Published As

Publication number Publication date
JPS6331109B2 (enrdf_load_stackoverflow) 1988-06-22

Similar Documents

Publication Publication Date Title
EP0272453A3 (en) Merged bipolar/cmos technology using electrically active trench
JPS6489365A (en) Semiconductor device
JPS5758356A (en) Manufacture of semiconductor device
JPS56162864A (en) Semiconductor device
EP0202477A3 (en) Method of forming an electrical short circuit between adjoining regions in an insulated gate semiconductor device
JPS56100461A (en) Semiconductor ic device
JPS57197863A (en) Semiconductor integrated circuit device
JPS5691470A (en) Semiconductor
JPS57118669A (en) Multiemitter type npn transistor
JPS56125875A (en) Semiconductor integrated circuit device
JPS57118663A (en) Manufacture of semiconductor integrated circuit device
JPS56157042A (en) Manufacture of semiconductor device
JPS5493366A (en) Bipolar type transistor
JPS56130964A (en) Integrated circuit device
JPS54148388A (en) Semiconductor integrated circuit device
JPS6411347A (en) Monolithic integrated circuit
JPS5745257A (en) Manufacture of semiconductor device
JPS5721860A (en) Semiconductor device and manufacture thereof
JPS57192074A (en) Semiconductor device
JPS57132355A (en) Semiconductor integrated circuit device
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS5749249A (en) Semiconductor integrated circuit device
JPS56157043A (en) Manufacture of semiconductor device
JPS5793570A (en) Lateral type transistor
JPS56112762A (en) Semiconductor device