JPS57197837A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57197837A JPS57197837A JP8230981A JP8230981A JPS57197837A JP S57197837 A JPS57197837 A JP S57197837A JP 8230981 A JP8230981 A JP 8230981A JP 8230981 A JP8230981 A JP 8230981A JP S57197837 A JPS57197837 A JP S57197837A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- wiring
- lift
- etching
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form a buried electrode in an electrode opening with an etching mask as lift-off material for flatness of a wiring surface, by applying anisotropy etching to the insulating layer on a semiconductor substrate to form an electrode opening without side etch. CONSTITUTION:A phosphorus glass layer 17 is formed on an Si substrate 11 with a gate oxide film 12, field oxide film 13, Si gate electrode 14 and Si wiring 15 for heat treatment to soften with the stepwise difference smoothly. Next, after anisotropic etching is applied with a resist pattern 18 as a mask to form an electrode opening 19 without side etch, metallic thin layers 20, 21 are adhered to remove the othesr than the buried electrode 21 with the resist pattern 18 as a lift-off material. Then, the stepwise difference on the wiring surface of the wiring metallic film 22 is reduced for the elimination of the disconnection thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8230981A JPS57197837A (en) | 1981-05-29 | 1981-05-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8230981A JPS57197837A (en) | 1981-05-29 | 1981-05-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57197837A true JPS57197837A (en) | 1982-12-04 |
Family
ID=13770950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8230981A Pending JPS57197837A (en) | 1981-05-29 | 1981-05-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57197837A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008193910A (en) * | 2007-02-08 | 2008-08-28 | Kubota Corp | Structure for leaking down of treated product in thresher |
-
1981
- 1981-05-29 JP JP8230981A patent/JPS57197837A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008193910A (en) * | 2007-02-08 | 2008-08-28 | Kubota Corp | Structure for leaking down of treated product in thresher |
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