JPS57196794A - Epitaxial growth method - Google Patents

Epitaxial growth method

Info

Publication number
JPS57196794A
JPS57196794A JP8230681A JP8230681A JPS57196794A JP S57196794 A JPS57196794 A JP S57196794A JP 8230681 A JP8230681 A JP 8230681A JP 8230681 A JP8230681 A JP 8230681A JP S57196794 A JPS57196794 A JP S57196794A
Authority
JP
Japan
Prior art keywords
epitaxial growth
substrate
single crystal
sub
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8230681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6229398B2 (enrdf_load_stackoverflow
Inventor
Yoshiaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8230681A priority Critical patent/JPS57196794A/ja
Publication of JPS57196794A publication Critical patent/JPS57196794A/ja
Publication of JPS6229398B2 publication Critical patent/JPS6229398B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP8230681A 1981-05-29 1981-05-29 Epitaxial growth method Granted JPS57196794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8230681A JPS57196794A (en) 1981-05-29 1981-05-29 Epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8230681A JPS57196794A (en) 1981-05-29 1981-05-29 Epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS57196794A true JPS57196794A (en) 1982-12-02
JPS6229398B2 JPS6229398B2 (enrdf_load_stackoverflow) 1987-06-25

Family

ID=13770864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8230681A Granted JPS57196794A (en) 1981-05-29 1981-05-29 Epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS57196794A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085198A (ja) * 2006-09-28 2008-04-10 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2018073850A (ja) * 2016-10-24 2018-05-10 新日本無線株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210072A (en) * 1975-07-14 1977-01-26 Matsushita Electronics Corp Method for growing epitaxial crystal
JPS53108766A (en) * 1977-03-05 1978-09-21 Agency Of Ind Science & Technol Vapor phase growth method of sos film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210072A (en) * 1975-07-14 1977-01-26 Matsushita Electronics Corp Method for growing epitaxial crystal
JPS53108766A (en) * 1977-03-05 1978-09-21 Agency Of Ind Science & Technol Vapor phase growth method of sos film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008085198A (ja) * 2006-09-28 2008-04-10 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2018073850A (ja) * 2016-10-24 2018-05-10 新日本無線株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6229398B2 (enrdf_load_stackoverflow) 1987-06-25

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