JPS6229398B2 - - Google Patents

Info

Publication number
JPS6229398B2
JPS6229398B2 JP56082306A JP8230681A JPS6229398B2 JP S6229398 B2 JPS6229398 B2 JP S6229398B2 JP 56082306 A JP56082306 A JP 56082306A JP 8230681 A JP8230681 A JP 8230681A JP S6229398 B2 JPS6229398 B2 JP S6229398B2
Authority
JP
Japan
Prior art keywords
layer
epitaxial growth
temperature
epitaxial
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56082306A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57196794A (en
Inventor
Yoshiaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8230681A priority Critical patent/JPS57196794A/ja
Publication of JPS57196794A publication Critical patent/JPS57196794A/ja
Publication of JPS6229398B2 publication Critical patent/JPS6229398B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP8230681A 1981-05-29 1981-05-29 Epitaxial growth method Granted JPS57196794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8230681A JPS57196794A (en) 1981-05-29 1981-05-29 Epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8230681A JPS57196794A (en) 1981-05-29 1981-05-29 Epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS57196794A JPS57196794A (en) 1982-12-02
JPS6229398B2 true JPS6229398B2 (enrdf_load_stackoverflow) 1987-06-25

Family

ID=13770864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8230681A Granted JPS57196794A (en) 1981-05-29 1981-05-29 Epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS57196794A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4809175B2 (ja) * 2006-09-28 2011-11-09 株式会社日立国際電気 半導体装置の製造方法
JP2018073850A (ja) * 2016-10-24 2018-05-10 新日本無線株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210072A (en) * 1975-07-14 1977-01-26 Matsushita Electronics Corp Method for growing epitaxial crystal
JPS53108766A (en) * 1977-03-05 1978-09-21 Agency Of Ind Science & Technol Vapor phase growth method of sos film

Also Published As

Publication number Publication date
JPS57196794A (en) 1982-12-02

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