JPS57193054A - Substrate bias generating circuit - Google Patents

Substrate bias generating circuit

Info

Publication number
JPS57193054A
JPS57193054A JP56077652A JP7765281A JPS57193054A JP S57193054 A JPS57193054 A JP S57193054A JP 56077652 A JP56077652 A JP 56077652A JP 7765281 A JP7765281 A JP 7765281A JP S57193054 A JPS57193054 A JP S57193054A
Authority
JP
Japan
Prior art keywords
substrate
diode
layer
voltage
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56077652A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0423427B2 (enExample
Inventor
Atsushi Oritani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56077652A priority Critical patent/JPS57193054A/ja
Publication of JPS57193054A publication Critical patent/JPS57193054A/ja
Publication of JPH0423427B2 publication Critical patent/JPH0423427B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56077652A 1981-05-22 1981-05-22 Substrate bias generating circuit Granted JPS57193054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56077652A JPS57193054A (en) 1981-05-22 1981-05-22 Substrate bias generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56077652A JPS57193054A (en) 1981-05-22 1981-05-22 Substrate bias generating circuit

Publications (2)

Publication Number Publication Date
JPS57193054A true JPS57193054A (en) 1982-11-27
JPH0423427B2 JPH0423427B2 (enExample) 1992-04-22

Family

ID=13639817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56077652A Granted JPS57193054A (en) 1981-05-22 1981-05-22 Substrate bias generating circuit

Country Status (1)

Country Link
JP (1) JPS57193054A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307771A (ja) * 1987-05-29 1988-12-15 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 相補型金属酸化物半導体集積回路
JP2024101650A (ja) * 2023-01-18 2024-07-30 セイコーエプソン株式会社 ダイオード回路及び回路装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559757A (en) * 1978-10-30 1980-05-06 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559757A (en) * 1978-10-30 1980-05-06 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307771A (ja) * 1987-05-29 1988-12-15 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 相補型金属酸化物半導体集積回路
JP2024101650A (ja) * 2023-01-18 2024-07-30 セイコーエプソン株式会社 ダイオード回路及び回路装置

Also Published As

Publication number Publication date
JPH0423427B2 (enExample) 1992-04-22

Similar Documents

Publication Publication Date Title
JPS5252593A (en) Semiconductor light receiving diode
JPS5559756A (en) Semiconductor device
JPS55113239A (en) Power source device for traveling-wave tube
JPS54134547A (en) Mosfet switching circuit
KR890009004A (ko) 바이폴라-cmos 회로
JPS5785266A (en) Zener diode
US3134905A (en) Photosensitive semiconductor junction device
JPS56150862A (en) Semiconductor device
JPS57173974A (en) Semiconductor device
JPS5559757A (en) Semiconductor device
JPS54156463A (en) Logic circuit
JPS556847A (en) Semiconductor device
JPS5588372A (en) Lateral type transistor
JPS5776916A (en) Output circuit
JPS5561063A (en) Schottky barrier diode built-in transistor
JPS5457973A (en) Semiconductor device for switching control
JPS6477968A (en) Semiconductor device
JPS57103356A (en) Mos semiconductor device
JPS55113360A (en) Substrate bias voltage generating circuit
JPS55608A (en) Bias circuit
JPS5736854A (en) Integrated circuit device
JPS572566A (en) Reverse conductive transistor
JPS56150847A (en) Semiconductor device
JPS57102066A (en) Semiconductor integrated circuit device
JPS5624965A (en) Semiconductor integrated circuit