JPS57192074A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57192074A
JPS57192074A JP7658781A JP7658781A JPS57192074A JP S57192074 A JPS57192074 A JP S57192074A JP 7658781 A JP7658781 A JP 7658781A JP 7658781 A JP7658781 A JP 7658781A JP S57192074 A JPS57192074 A JP S57192074A
Authority
JP
Japan
Prior art keywords
type diffusion
base
type
diffusion layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7658781A
Other languages
English (en)
Inventor
Yukio Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7658781A priority Critical patent/JPS57192074A/ja
Publication of JPS57192074A publication Critical patent/JPS57192074A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP7658781A 1981-05-22 1981-05-22 Semiconductor device Pending JPS57192074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7658781A JPS57192074A (en) 1981-05-22 1981-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7658781A JPS57192074A (en) 1981-05-22 1981-05-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57192074A true JPS57192074A (en) 1982-11-26

Family

ID=13609416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7658781A Pending JPS57192074A (en) 1981-05-22 1981-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57192074A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128142A (ja) * 2002-10-01 2004-04-22 Nec Compound Semiconductor Devices Ltd 半導体装置及びその製造方法
CN117594442A (zh) * 2024-01-18 2024-02-23 常州承芯半导体有限公司 半导体器件及其形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128142A (ja) * 2002-10-01 2004-04-22 Nec Compound Semiconductor Devices Ltd 半導体装置及びその製造方法
JP4626935B2 (ja) * 2002-10-01 2011-02-09 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
CN117594442A (zh) * 2024-01-18 2024-02-23 常州承芯半导体有限公司 半导体器件及其形成方法
CN117594442B (zh) * 2024-01-18 2024-05-28 常州承芯半导体有限公司 半导体器件及其形成方法

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