JPS57186335A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS57186335A
JPS57186335A JP56070078A JP7007881A JPS57186335A JP S57186335 A JPS57186335 A JP S57186335A JP 56070078 A JP56070078 A JP 56070078A JP 7007881 A JP7007881 A JP 7007881A JP S57186335 A JPS57186335 A JP S57186335A
Authority
JP
Japan
Prior art keywords
film
gas
mask
plasma
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56070078A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0143453B2 (enExample
Inventor
Hideo Ikitsu
Yoshiharu Ozaki
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56070078A priority Critical patent/JPS57186335A/ja
Publication of JPS57186335A publication Critical patent/JPS57186335A/ja
Publication of JPH0143453B2 publication Critical patent/JPH0143453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56070078A 1981-05-12 1981-05-12 Forming method for pattern Granted JPS57186335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56070078A JPS57186335A (en) 1981-05-12 1981-05-12 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070078A JPS57186335A (en) 1981-05-12 1981-05-12 Forming method for pattern

Publications (2)

Publication Number Publication Date
JPS57186335A true JPS57186335A (en) 1982-11-16
JPH0143453B2 JPH0143453B2 (enExample) 1989-09-20

Family

ID=13421141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56070078A Granted JPS57186335A (en) 1981-05-12 1981-05-12 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS57186335A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786236A (ja) * 1993-09-17 1995-03-31 Nec Corp 半導体装置の製造方法
JP2002543613A (ja) * 1999-05-05 2002-12-17 ラム・リサーチ・コーポレーション 低容量の誘電体層をエッチングするための技術
KR100800165B1 (ko) 2006-12-28 2008-02-01 주식회사 하이닉스반도체 반도체 소자의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS5497373A (en) * 1978-01-19 1979-08-01 Mitsubishi Electric Corp Removal method of resist
JPS5623752A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS5497373A (en) * 1978-01-19 1979-08-01 Mitsubishi Electric Corp Removal method of resist
JPS5623752A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786236A (ja) * 1993-09-17 1995-03-31 Nec Corp 半導体装置の製造方法
JP2002543613A (ja) * 1999-05-05 2002-12-17 ラム・リサーチ・コーポレーション 低容量の誘電体層をエッチングするための技術
KR100800165B1 (ko) 2006-12-28 2008-02-01 주식회사 하이닉스반도체 반도체 소자의 제조방법

Also Published As

Publication number Publication date
JPH0143453B2 (enExample) 1989-09-20

Similar Documents

Publication Publication Date Title
JPS57168246A (en) Formation of negative pattern
US4957834A (en) Method for manufacturing photomask
JPS57186335A (en) Forming method for pattern
EP0174249B1 (en) A dry etching method for a chromium or chromium oxide film
JPS6425419A (en) Etching
JPS57157545A (en) Manufacture of semiconductor device
JPS5718324A (en) Method of working
JPS57130431A (en) Manufacture of semiconductor device
JPS5461478A (en) Chromium plate
JPS57143826A (en) Formation of resist pattern on gapped semiconductor substrate
JPS5666038A (en) Formation of micro-pattern
JPS56100422A (en) Plasma etching method
JPS562633A (en) Etching method
JPS57201026A (en) Manufacture of semiconductor device
JPS5496371A (en) Mask forming method
JPS5612736A (en) Formation of fine chromium pattern
JPS5687343A (en) Forming method of wiring
JPS57141641A (en) Formation of positive pattern
JPS5561027A (en) Gas plasma etching
JPS5670636A (en) Gas plasma etching of transparent conductive film
JPS5732634A (en) Production of pattern with fine gap
JPS51148366A (en) Pattern formation method
JPS55153335A (en) Shaping method of al pattern
JPS56158334A (en) Manufacture of hard mask
JPS5553421A (en) Composite mask for ion etching