JPS57183050A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS57183050A
JPS57183050A JP6733681A JP6733681A JPS57183050A JP S57183050 A JPS57183050 A JP S57183050A JP 6733681 A JP6733681 A JP 6733681A JP 6733681 A JP6733681 A JP 6733681A JP S57183050 A JPS57183050 A JP S57183050A
Authority
JP
Japan
Prior art keywords
insulating film
field insulating
film
wiring
wiring part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6733681A
Other languages
Japanese (ja)
Inventor
Koichi Nishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6733681A priority Critical patent/JPS57183050A/en
Publication of JPS57183050A publication Critical patent/JPS57183050A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the parasitic capacity of the wiring part by a method wherein the field insulating film of the wiring part is formed thicker than the field insulating film of the cell part. CONSTITUTION:The field insulating film 12 and the field insulating film 13 are respectively formed on the cell part side Ce and the wiring part side Lw on the semiconductor substrate 11 while the wirings 14 and 15 are respectively formed on said insulating films 12 and 13. In this case, the film 13 is formed thicker than the film 12. Through these procedures, the deterioration of the characteristics such as the lowering of switching speed due to the tendency of larger scaled IC may be avoided, because the increase of the parasitic capacity due to the extended wiring can be restrained.
JP6733681A 1981-05-02 1981-05-02 Integrated circuit Pending JPS57183050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6733681A JPS57183050A (en) 1981-05-02 1981-05-02 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6733681A JPS57183050A (en) 1981-05-02 1981-05-02 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS57183050A true JPS57183050A (en) 1982-11-11

Family

ID=13342065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6733681A Pending JPS57183050A (en) 1981-05-02 1981-05-02 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS57183050A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224340A (en) * 1985-03-29 1986-10-06 Agency Of Ind Science & Technol Semiconductor device and manufacture thereof
JP2008148453A (en) * 2006-12-11 2008-06-26 Mitsubishi Electric Corp Insulation ring and rotary electric machine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224340A (en) * 1985-03-29 1986-10-06 Agency Of Ind Science & Technol Semiconductor device and manufacture thereof
JPH0587974B2 (en) * 1985-03-29 1993-12-20 Kogyo Gijutsuin
JP2008148453A (en) * 2006-12-11 2008-06-26 Mitsubishi Electric Corp Insulation ring and rotary electric machine

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
EP0263287A3 (en) Forming a capacitor in an integrated circuit
JPS57183050A (en) Integrated circuit
JPS5297684A (en) Semiconductor element
JPS56115557A (en) Manufacture of semiconductor device
JPS5558561A (en) Semiconductor capacitance element
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
JPS5750451A (en) Semiconductor
JPS52119874A (en) Semi-conductor device
JPS5721849A (en) Semiconductor integrated circuit
JPS52103974A (en) Semicondcutor integrated circuit device
JPS53112687A (en) Semiconductor device
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS6491120A (en) Thin film transistor
JPS5355992A (en) Semiconductor device
JPS56158466A (en) Semiconductor device
JPS5487196A (en) Semiconductor cross point switch
JPS5740968A (en) Semiconductor device
JPS52131482A (en) Dielectric insulation/isolation substrate
JPS5268388A (en) Semiconductor integrated circuit
JPS5457881A (en) Semiconductor device
JPS57190333A (en) Semiconductor device
JPS5352387A (en) Semiconductor integrated circuit
JPS5660052A (en) Semiconductor memory device
JPS5587455A (en) Semiconductor device