JPS6491120A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6491120A JPS6491120A JP24782887A JP24782887A JPS6491120A JP S6491120 A JPS6491120 A JP S6491120A JP 24782887 A JP24782887 A JP 24782887A JP 24782887 A JP24782887 A JP 24782887A JP S6491120 A JPS6491120 A JP S6491120A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate insulating
- light
- thin film
- channel part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000002542 deteriorative effect Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Abstract
PURPOSE:To suppress light incidence on a semiconductor channel part from both above and below a substrate and to prevent the off characteristics of the thin film transistor (TR) from deteriorating by covering the end surfaces of a gate insulating film in the vicinity of a noncrystal semiconductor pattern with metal. CONSTITUTION:Light from a back light passed through the substrate 1 and then enters the gate insulation film 3. Here, an end part of the gate insulating film connecting with the channel part of a semiconductor (I) 4 is covered with the metal at the time of the formation of a source drain (I) 6 and source drain (II) 7; and the gate insulating film 3 is covered together with a gate 2 to prevent the external light from entering the channel part through the gate insulating film 3. Consequently, the off characteristics of the thin film TR are prevented from deteriorating owing to the light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24782887A JPS6491120A (en) | 1987-10-02 | 1987-10-02 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24782887A JPS6491120A (en) | 1987-10-02 | 1987-10-02 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6491120A true JPS6491120A (en) | 1989-04-10 |
Family
ID=17169274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24782887A Pending JPS6491120A (en) | 1987-10-02 | 1987-10-02 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6491120A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007199188A (en) * | 2006-01-24 | 2007-08-09 | Seiko Epson Corp | Electrooptical apparatus and method for manufacturing the same, and electronic equipment |
| JP2013165257A (en) * | 2012-02-13 | 2013-08-22 | Samsung Electronics Co Ltd | Thin film transistor, and display panel adopting the same |
| JP2013225683A (en) * | 2009-03-27 | 2013-10-31 | Semiconductor Energy Lab Co Ltd | Display device |
| KR20190032316A (en) * | 2019-03-14 | 2019-03-27 | 삼성전자주식회사 | Thin film transistor and display panel employing the same |
-
1987
- 1987-10-02 JP JP24782887A patent/JPS6491120A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007199188A (en) * | 2006-01-24 | 2007-08-09 | Seiko Epson Corp | Electrooptical apparatus and method for manufacturing the same, and electronic equipment |
| JP2013225683A (en) * | 2009-03-27 | 2013-10-31 | Semiconductor Energy Lab Co Ltd | Display device |
| JP2013232655A (en) * | 2009-03-27 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US9012918B2 (en) | 2009-03-27 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor |
| US9705003B2 (en) | 2009-03-27 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including first and second gate electrodes and stack of insulating layers |
| JP2013165257A (en) * | 2012-02-13 | 2013-08-22 | Samsung Electronics Co Ltd | Thin film transistor, and display panel adopting the same |
| KR20190032316A (en) * | 2019-03-14 | 2019-03-27 | 삼성전자주식회사 | Thin film transistor and display panel employing the same |
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