JPS57176764A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57176764A JPS57176764A JP6209281A JP6209281A JPS57176764A JP S57176764 A JPS57176764 A JP S57176764A JP 6209281 A JP6209281 A JP 6209281A JP 6209281 A JP6209281 A JP 6209281A JP S57176764 A JPS57176764 A JP S57176764A
- Authority
- JP
- Japan
- Prior art keywords
- film
- diffusion
- type
- region
- diffusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6209281A JPS57176764A (en) | 1981-04-23 | 1981-04-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6209281A JPS57176764A (en) | 1981-04-23 | 1981-04-23 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57176764A true JPS57176764A (en) | 1982-10-30 |
JPH0371770B2 JPH0371770B2 (ja) | 1991-11-14 |
Family
ID=13190058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6209281A Granted JPS57176764A (en) | 1981-04-23 | 1981-04-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57176764A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63164463A (ja) * | 1986-12-26 | 1988-07-07 | Fujitsu Ltd | 半導体装置の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140866A (ja) * | 1974-10-04 | 1976-04-06 | Nippon Electric Co | Handotaisochi |
-
1981
- 1981-04-23 JP JP6209281A patent/JPS57176764A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140866A (ja) * | 1974-10-04 | 1976-04-06 | Nippon Electric Co | Handotaisochi |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63164463A (ja) * | 1986-12-26 | 1988-07-07 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0371770B2 (ja) | 1991-11-14 |
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