JPS57169994A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS57169994A JPS57169994A JP56048620A JP4862081A JPS57169994A JP S57169994 A JPS57169994 A JP S57169994A JP 56048620 A JP56048620 A JP 56048620A JP 4862081 A JP4862081 A JP 4862081A JP S57169994 A JPS57169994 A JP S57169994A
- Authority
- JP
- Japan
- Prior art keywords
- readout
- bit line
- current
- level
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56048620A JPS57169994A (en) | 1981-03-31 | 1981-03-31 | Semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56048620A JPS57169994A (en) | 1981-03-31 | 1981-03-31 | Semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57169994A true JPS57169994A (en) | 1982-10-19 |
JPS6149757B2 JPS6149757B2 (enrdf_load_stackoverflow) | 1986-10-30 |
Family
ID=12808444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56048620A Granted JPS57169994A (en) | 1981-03-31 | 1981-03-31 | Semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57169994A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60251590A (ja) * | 1984-05-25 | 1985-12-12 | Toshiba Corp | 半導体メモリ |
JPS62145595A (ja) * | 1985-12-20 | 1987-06-29 | Toshiba Corp | 半導体記憶装置 |
FR2610135A1 (fr) * | 1987-01-28 | 1988-07-29 | Cypress Semiconductor Corp | Memoire a semiconducteurs a lignes de donnees differentielles |
JPH01119982A (ja) * | 1987-10-31 | 1989-05-12 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
JPH0729370A (ja) * | 1990-10-16 | 1995-01-31 | Samsung Electron Co Ltd | スタティックramのデータライン等化回路およびその等化方法 |
-
1981
- 1981-03-31 JP JP56048620A patent/JPS57169994A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60251590A (ja) * | 1984-05-25 | 1985-12-12 | Toshiba Corp | 半導体メモリ |
JPS62145595A (ja) * | 1985-12-20 | 1987-06-29 | Toshiba Corp | 半導体記憶装置 |
FR2610135A1 (fr) * | 1987-01-28 | 1988-07-29 | Cypress Semiconductor Corp | Memoire a semiconducteurs a lignes de donnees differentielles |
JPH01119982A (ja) * | 1987-10-31 | 1989-05-12 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
JPH0729370A (ja) * | 1990-10-16 | 1995-01-31 | Samsung Electron Co Ltd | スタティックramのデータライン等化回路およびその等化方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6149757B2 (enrdf_load_stackoverflow) | 1986-10-30 |
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