JPS57169273A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57169273A
JPS57169273A JP56055266A JP5526681A JPS57169273A JP S57169273 A JPS57169273 A JP S57169273A JP 56055266 A JP56055266 A JP 56055266A JP 5526681 A JP5526681 A JP 5526681A JP S57169273 A JPS57169273 A JP S57169273A
Authority
JP
Japan
Prior art keywords
type
layer
junction
type layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56055266A
Other languages
English (en)
Japanese (ja)
Other versions
JPS649742B2 (enrdf_load_stackoverflow
Inventor
Makio Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP56055266A priority Critical patent/JPS57169273A/ja
Publication of JPS57169273A publication Critical patent/JPS57169273A/ja
Publication of JPS649742B2 publication Critical patent/JPS649742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56055266A 1981-04-13 1981-04-13 Semiconductor device Granted JPS57169273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56055266A JPS57169273A (en) 1981-04-13 1981-04-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56055266A JPS57169273A (en) 1981-04-13 1981-04-13 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57169273A true JPS57169273A (en) 1982-10-18
JPS649742B2 JPS649742B2 (enrdf_load_stackoverflow) 1989-02-20

Family

ID=12993796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56055266A Granted JPS57169273A (en) 1981-04-13 1981-04-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57169273A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064481A (ja) * 1983-09-19 1985-04-13 Hitachi Ltd 半導体装置
JPS60158676A (ja) * 1984-01-28 1985-08-20 Rohm Co Ltd 定電圧ダイオ−ド
JPS60233864A (ja) * 1984-05-02 1985-11-20 Nec Ic Microcomput Syst Ltd 半導体装置の構造
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636171A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Zener diode and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636171A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Zener diode and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064481A (ja) * 1983-09-19 1985-04-13 Hitachi Ltd 半導体装置
JPS60158676A (ja) * 1984-01-28 1985-08-20 Rohm Co Ltd 定電圧ダイオ−ド
JPS60233864A (ja) * 1984-05-02 1985-11-20 Nec Ic Microcomput Syst Ltd 半導体装置の構造
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits

Also Published As

Publication number Publication date
JPS649742B2 (enrdf_load_stackoverflow) 1989-02-20

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