JPS57168246A - Formation of negative pattern - Google Patents

Formation of negative pattern

Info

Publication number
JPS57168246A
JPS57168246A JP5330081A JP5330081A JPS57168246A JP S57168246 A JPS57168246 A JP S57168246A JP 5330081 A JP5330081 A JP 5330081A JP 5330081 A JP5330081 A JP 5330081A JP S57168246 A JPS57168246 A JP S57168246A
Authority
JP
Japan
Prior art keywords
resist layer
layer
resist
worked
phenyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5330081A
Other languages
English (en)
Inventor
Yasuhiro Yoneda
Tateo Kitamura
Jiro Naito
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5330081A priority Critical patent/JPS57168246A/ja
Publication of JPS57168246A publication Critical patent/JPS57168246A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP5330081A 1981-04-09 1981-04-09 Formation of negative pattern Pending JPS57168246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5330081A JPS57168246A (en) 1981-04-09 1981-04-09 Formation of negative pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5330081A JPS57168246A (en) 1981-04-09 1981-04-09 Formation of negative pattern

Publications (1)

Publication Number Publication Date
JPS57168246A true JPS57168246A (en) 1982-10-16

Family

ID=12938868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5330081A Pending JPS57168246A (en) 1981-04-09 1981-04-09 Formation of negative pattern

Country Status (1)

Country Link
JP (1) JPS57168246A (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589323A (ja) * 1981-07-10 1983-01-19 Nippon Telegr & Teleph Corp <Ntt> 微細レジストパタンの形成方法
EP0090615A2 (en) * 1982-03-26 1983-10-05 Hitachi, Ltd. Method for forming fine resist patterns
JPS5965430A (ja) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS60124940A (ja) * 1983-12-12 1985-07-04 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 乾式ポジテイブ・ト−ンの微小パタ−ン形成方法
JPS60254035A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd パタ−ン形成方法
JPS60254036A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd パタ−ン形成方法
US4981778A (en) * 1985-03-07 1991-01-01 Hughes Aircraft Company Polysiloxane, resist for ion beam and electron beam lithography
EP1176468A1 (fr) * 2000-07-26 2002-01-30 France Telecom Résine, bi-couche de résine pour photolithographie dans l'extrême ultraviolet (EUV) et procédé de photolithogravure en extrême ultraviolet (EUV)
US6731857B2 (en) 2001-03-29 2004-05-04 Shipley Company, L.L.C. Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom
US6842577B2 (en) 2002-12-02 2005-01-11 Shipley Company L.L.C. Photoimageable waveguide composition and waveguide formed therefrom
US7024093B2 (en) 2002-12-02 2006-04-04 Shipley Company, Llc Methods of forming waveguides and waveguides formed therefrom
US7072563B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072564B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072565B2 (en) 2004-04-14 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589323A (ja) * 1981-07-10 1983-01-19 Nippon Telegr & Teleph Corp <Ntt> 微細レジストパタンの形成方法
EP0090615A2 (en) * 1982-03-26 1983-10-05 Hitachi, Ltd. Method for forming fine resist patterns
JPS5965430A (ja) * 1982-10-06 1984-04-13 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS60124940A (ja) * 1983-12-12 1985-07-04 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 乾式ポジテイブ・ト−ンの微小パタ−ン形成方法
JPH0376743B2 (ja) * 1983-12-12 1991-12-06 Intaanashonaru Bijinesu Mashiinzu Corp
JPS60254035A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd パタ−ン形成方法
JPS60254036A (ja) * 1984-05-30 1985-12-14 Fujitsu Ltd パタ−ン形成方法
US4981778A (en) * 1985-03-07 1991-01-01 Hughes Aircraft Company Polysiloxane, resist for ion beam and electron beam lithography
EP1176468A1 (fr) * 2000-07-26 2002-01-30 France Telecom Résine, bi-couche de résine pour photolithographie dans l'extrême ultraviolet (EUV) et procédé de photolithogravure en extrême ultraviolet (EUV)
FR2812450A1 (fr) * 2000-07-26 2002-02-01 France Telecom Resine, bi-couche de resine pour photolithographie dans l'extreme ultraviolet (euv) et procede de photolithogravure en extreme ultraviolet (euv)
US6731857B2 (en) 2001-03-29 2004-05-04 Shipley Company, L.L.C. Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom
US6842577B2 (en) 2002-12-02 2005-01-11 Shipley Company L.L.C. Photoimageable waveguide composition and waveguide formed therefrom
US7024093B2 (en) 2002-12-02 2006-04-04 Shipley Company, Llc Methods of forming waveguides and waveguides formed therefrom
US7072563B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072564B2 (en) 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
US7072565B2 (en) 2004-04-14 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom

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