JPS57167630A - Plasma vapor-phase growing device - Google Patents

Plasma vapor-phase growing device

Info

Publication number
JPS57167630A
JPS57167630A JP3638481A JP3638481A JPS57167630A JP S57167630 A JPS57167630 A JP S57167630A JP 3638481 A JP3638481 A JP 3638481A JP 3638481 A JP3638481 A JP 3638481A JP S57167630 A JPS57167630 A JP S57167630A
Authority
JP
Japan
Prior art keywords
plasma
generated
electrodes
wall surface
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3638481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643338B2 (enExample
Inventor
Kanetake Takasaki
Kenji Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3638481A priority Critical patent/JPS57167630A/ja
Publication of JPS57167630A publication Critical patent/JPS57167630A/ja
Publication of JPS643338B2 publication Critical patent/JPS643338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP3638481A 1981-03-13 1981-03-13 Plasma vapor-phase growing device Granted JPS57167630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3638481A JPS57167630A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3638481A JPS57167630A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3105241A Division JP2553256B2 (ja) 1991-02-12 1991-02-12 プラズマ気相成長方法

Publications (2)

Publication Number Publication Date
JPS57167630A true JPS57167630A (en) 1982-10-15
JPS643338B2 JPS643338B2 (enExample) 1989-01-20

Family

ID=12468344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3638481A Granted JPS57167630A (en) 1981-03-13 1981-03-13 Plasma vapor-phase growing device

Country Status (1)

Country Link
JP (1) JPS57167630A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989759A (ja) * 1982-11-12 1984-05-24 Hitachi Tokyo Electronics Co Ltd 気体電気化学反応装置
JPS6037120A (ja) * 1983-08-09 1985-02-26 Seiko Epson Corp プラズマｃｖｄ装置
JPS61143579A (ja) * 1984-12-14 1986-07-01 Nachi Fujikoshi Corp プラズマイオン供給方法
JPS62172718A (ja) * 1986-01-27 1987-07-29 Canon Inc 堆積膜形成装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555530A (en) * 1978-10-18 1980-04-23 Takuo Sugano Electrode device for plasma processor
JPS55102239A (en) * 1979-01-30 1980-08-05 Matsushita Electronics Corp Apparatus for plasma-gas-phase growth
JPS5648099A (en) * 1979-09-25 1981-05-01 Tokyo Ohka Kogyo Co Ltd Electrode for generating plasma for sheet type plasma reaction processor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555530A (en) * 1978-10-18 1980-04-23 Takuo Sugano Electrode device for plasma processor
JPS55102239A (en) * 1979-01-30 1980-08-05 Matsushita Electronics Corp Apparatus for plasma-gas-phase growth
JPS5648099A (en) * 1979-09-25 1981-05-01 Tokyo Ohka Kogyo Co Ltd Electrode for generating plasma for sheet type plasma reaction processor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989759A (ja) * 1982-11-12 1984-05-24 Hitachi Tokyo Electronics Co Ltd 気体電気化学反応装置
JPS6037120A (ja) * 1983-08-09 1985-02-26 Seiko Epson Corp プラズマｃｖｄ装置
JPS61143579A (ja) * 1984-12-14 1986-07-01 Nachi Fujikoshi Corp プラズマイオン供給方法
JPS62172718A (ja) * 1986-01-27 1987-07-29 Canon Inc 堆積膜形成装置

Also Published As

Publication number Publication date
JPS643338B2 (enExample) 1989-01-20

Similar Documents

Publication Publication Date Title
TW357197B (en) Manufacturing method of titanium conductive films
MX9205420A (es) Aparato y metodo para tratamientos rapidos con plasma.
ATE212750T1 (de) Mikrowellengespeistes abscheideverfahren mit regelung der substrattemperatur.
JPS5645760A (en) Vapor growth method
JPS55124235A (en) Plasma generation method
JPS5633839A (en) Plasma treatment and device therefor
JPS5684476A (en) Etching method of gas plasma
JPS5713174A (en) Reactive sputtering method
JPS57167631A (en) Plasma vapor-phase growing method
KR890003981A (ko) 할로겐을 함유하는 카본재료 및 그의 침착 방법
JPS57167630A (en) Plasma vapor-phase growing device
KR960034479A (ko) 산화물박막의 제조방법 및 그것에 사용되는 화학증착장치
EP0136626A3 (enExample)
JPS55102239A (en) Apparatus for plasma-gas-phase growth
CA2120854A1 (en) Light valve with low emissivity coating as electrode
EP0244874A3 (en) Luminescent material, process for producing it and luminescent semiconductor device using it
KR20040034907A (ko) 박막 증착 속도를 조절하는 샤워헤드를 구비한 화학 기상증착 장치.
GB2155044A (en) Method for the deposition of a coating
JPS56130466A (en) Film forming method
JPS56121629A (en) Film forming method
JPS57161057A (en) Chemical vapor phase growth device using plasma
JPS53110378A (en) Plasma carrying device
JPS57178331A (en) Plasma reaction device
JPS556409A (en) Plasma gas phase reactor
JPS57123968A (en) Formation of zinc oxide film by plasma vapor phase method