JPS57164529A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS57164529A JPS57164529A JP56049266A JP4926681A JPS57164529A JP S57164529 A JPS57164529 A JP S57164529A JP 56049266 A JP56049266 A JP 56049266A JP 4926681 A JP4926681 A JP 4926681A JP S57164529 A JPS57164529 A JP S57164529A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- flow amount
- parallel flat
- gas
- gas flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56049266A JPS57164529A (en) | 1981-04-03 | 1981-04-03 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56049266A JPS57164529A (en) | 1981-04-03 | 1981-04-03 | Dry etching method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1638289A Division JPH01230238A (ja) | 1989-01-27 | 1989-01-27 | ドライエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57164529A true JPS57164529A (en) | 1982-10-09 |
| JPH0160939B2 JPH0160939B2 (https=) | 1989-12-26 |
Family
ID=12826023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56049266A Granted JPS57164529A (en) | 1981-04-03 | 1981-04-03 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57164529A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61256724A (ja) * | 1985-05-06 | 1986-11-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | プラズマ・エツチ開孔のプロフイルを制御する方法 |
| US7074724B2 (en) * | 2000-04-27 | 2006-07-11 | Micron Technology, Inc. | Etchant and method of use |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5137108A (en) * | 1989-12-28 | 1992-08-11 | Aar Corporation | Vehicle engine mounting system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5480685A (en) * | 1977-12-09 | 1979-06-27 | Chiyou Uru Esu Ai Gijiyutsu Ke | Dry etching method |
-
1981
- 1981-04-03 JP JP56049266A patent/JPS57164529A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5480685A (en) * | 1977-12-09 | 1979-06-27 | Chiyou Uru Esu Ai Gijiyutsu Ke | Dry etching method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61256724A (ja) * | 1985-05-06 | 1986-11-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | プラズマ・エツチ開孔のプロフイルを制御する方法 |
| US7074724B2 (en) * | 2000-04-27 | 2006-07-11 | Micron Technology, Inc. | Etchant and method of use |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0160939B2 (https=) | 1989-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56158873A (en) | Dry etching method | |
| JPS57164529A (en) | Dry etching method | |
| JPS5227694A (en) | Sample surface analyzing apparatus | |
| JPS57108267A (en) | Etching method | |
| JPS5648140A (en) | Manufacture of semiconductor device | |
| JPS56169776A (en) | Selective dry etching method | |
| JPS5766642A (en) | Plasma etching device | |
| JPS54108579A (en) | Method and device for plasma etching | |
| JPS57201027A (en) | Dry etching method | |
| JPS56131934A (en) | Manufacture of semiconductor device | |
| JPS55125635A (en) | Semiconductor device | |
| JPS57202744A (en) | Manufacture of semiconductor device | |
| JPS57211239A (en) | Formation of insulating film | |
| JPS5596633A (en) | Method of forming electrode of semiconductor device | |
| JPS6456886A (en) | Dry etching method | |
| JPS5548933A (en) | Forming of mesa groove | |
| JPS5743412A (en) | Reduced pressure cvd method | |
| JPS57149726A (en) | Manufacture of semiconductor device | |
| JPS5669374A (en) | Dry etching method | |
| JPS5544734A (en) | Semiconductor device | |
| JPS5776847A (en) | Manufacture of semiconductor device | |
| JPS53112673A (en) | Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution | |
| JPS5527953A (en) | Method of fabricating senser | |
| JPS5333580A (en) | Production of semiconductor device | |
| JPS5430781A (en) | Dry etching method |