JPS57159045A - Manufacture of multilayer wiring structure - Google Patents

Manufacture of multilayer wiring structure

Info

Publication number
JPS57159045A
JPS57159045A JP4403181A JP4403181A JPS57159045A JP S57159045 A JPS57159045 A JP S57159045A JP 4403181 A JP4403181 A JP 4403181A JP 4403181 A JP4403181 A JP 4403181A JP S57159045 A JPS57159045 A JP S57159045A
Authority
JP
Japan
Prior art keywords
layer
insulating layer
resist
multilayer wiring
wiring structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4403181A
Other languages
Japanese (ja)
Inventor
Kazuo Nate
Kazunari Takemoto
Toshio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4403181A priority Critical patent/JPS57159045A/en
Publication of JPS57159045A publication Critical patent/JPS57159045A/en
Pending legal-status Critical Current

Links

Landscapes

  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To obtain a multilayer wiring structure having high accuracy and high reliability by employing positive type high molecular material resist which senses with high energy beam for the etching resist of an insulating layer. CONSTITUTION:The first insulating layer and the first layer wire conductor 2 are formed on a semiconductor substrate 1, the second insulating layer 3 is then formed on the overall surface, and radiation sensitive high molecular material film 4 of electron beam made of copolymer containing more than 10mol% of unit represented by the general formula (I) or (II) and less than 90mol% of methacrylic acid alkyl ester, methacrylic acid, methacrylonitrile or the like is used as positive resist on the layer 3, thereby etching the layer 3 in high accuracy. In the general formulae, R represents hydrogen, methyl group, methoxy group, chlorine, dimethyl amino group, and n represents the degree of polymerization.
JP4403181A 1981-03-27 1981-03-27 Manufacture of multilayer wiring structure Pending JPS57159045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4403181A JPS57159045A (en) 1981-03-27 1981-03-27 Manufacture of multilayer wiring structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4403181A JPS57159045A (en) 1981-03-27 1981-03-27 Manufacture of multilayer wiring structure

Publications (1)

Publication Number Publication Date
JPS57159045A true JPS57159045A (en) 1982-10-01

Family

ID=12680264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4403181A Pending JPS57159045A (en) 1981-03-27 1981-03-27 Manufacture of multilayer wiring structure

Country Status (1)

Country Link
JP (1) JPS57159045A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107868065A (en) * 2017-10-19 2018-04-03 湖北美林药业有限公司 A kind of Flubuperone Hydrochloride compound and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107868065A (en) * 2017-10-19 2018-04-03 湖北美林药业有限公司 A kind of Flubuperone Hydrochloride compound and preparation method thereof
CN107868065B (en) * 2017-10-19 2021-05-18 湖北美林药业有限公司 Tolperisone hydrochloride compound and preparation method thereof

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