JPS57157530A - Forming method for insulator thin-film - Google Patents
Forming method for insulator thin-filmInfo
- Publication number
- JPS57157530A JPS57157530A JP56042206A JP4220681A JPS57157530A JP S57157530 A JPS57157530 A JP S57157530A JP 56042206 A JP56042206 A JP 56042206A JP 4220681 A JP4220681 A JP 4220681A JP S57157530 A JPS57157530 A JP S57157530A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- film
- pipe
- torr
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56042206A JPS57157530A (en) | 1981-03-23 | 1981-03-23 | Forming method for insulator thin-film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56042206A JPS57157530A (en) | 1981-03-23 | 1981-03-23 | Forming method for insulator thin-film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57157530A true JPS57157530A (en) | 1982-09-29 |
Family
ID=12629534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56042206A Pending JPS57157530A (en) | 1981-03-23 | 1981-03-23 | Forming method for insulator thin-film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57157530A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913335A (ja) * | 1982-07-14 | 1984-01-24 | Toshiba Corp | 窒化膜形成方法 |
JPS5986228A (ja) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | 窒化膜生成方法 |
-
1981
- 1981-03-23 JP JP56042206A patent/JPS57157530A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913335A (ja) * | 1982-07-14 | 1984-01-24 | Toshiba Corp | 窒化膜形成方法 |
JPH0414498B2 (ja) * | 1982-07-14 | 1992-03-13 | Tokyo Shibaura Electric Co | |
JPS5986228A (ja) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | 窒化膜生成方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6448421A (en) | Ashing method | |
JPS5766625A (en) | Manufacture of film | |
JPS57157530A (en) | Forming method for insulator thin-film | |
JPS5623736A (en) | Vapor phase growing method | |
JPS5648237A (en) | Evacuated gaseous phase reactor | |
JPS56149306A (en) | Formation of silicon nitride film | |
JPS57152132A (en) | Chemical vapor growing method | |
JPS54137973A (en) | Formation method of plasma nitride | |
JPS5790933A (en) | Manufacture of amorphous semiconductor film | |
JPS5471577A (en) | Production of semiconductor device | |
JPS56129696A (en) | Crystal growing apparatus | |
JPS56169320A (en) | Silicon carbide semiconductor | |
JPS54106081A (en) | Growth method in vapor phase | |
JPS6459808A (en) | Growth of semiconductor | |
JPS5493357A (en) | Growing method of polycrystal silicon | |
JPS5485274A (en) | Surface-hardened resin | |
JPS558003A (en) | Gaseous growth method and vertical type gaseous growth device | |
JPS57147279A (en) | Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor | |
JPS54139482A (en) | Manufacture of semiconductor device | |
JPS54139467A (en) | Method and apparatus for vapor epitaxial growth | |
JPS5518077A (en) | Device for growing film under gas | |
JPS54102295A (en) | Epitaxial crowth method | |
JPS55136199A (en) | Vapor phase growing method for magnesia spinel | |
JPS56169321A (en) | Silicon carbide semiconductor | |
JPS57175712A (en) | Preparation of powdery silicon nitride |