JPS57154877A - Schottky barrier gate type field effect transistor - Google Patents

Schottky barrier gate type field effect transistor

Info

Publication number
JPS57154877A
JPS57154877A JP4013781A JP4013781A JPS57154877A JP S57154877 A JPS57154877 A JP S57154877A JP 4013781 A JP4013781 A JP 4013781A JP 4013781 A JP4013781 A JP 4013781A JP S57154877 A JPS57154877 A JP S57154877A
Authority
JP
Japan
Prior art keywords
film
gate
gate electrode
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4013781A
Other languages
English (en)
Inventor
Tsutomu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4013781A priority Critical patent/JPS57154877A/ja
Publication of JPS57154877A publication Critical patent/JPS57154877A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP4013781A 1981-03-19 1981-03-19 Schottky barrier gate type field effect transistor Pending JPS57154877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4013781A JPS57154877A (en) 1981-03-19 1981-03-19 Schottky barrier gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4013781A JPS57154877A (en) 1981-03-19 1981-03-19 Schottky barrier gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS57154877A true JPS57154877A (en) 1982-09-24

Family

ID=12572394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4013781A Pending JPS57154877A (en) 1981-03-19 1981-03-19 Schottky barrier gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS57154877A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101219441B1 (ko) * 2010-12-27 2013-01-11 전자부품연구원 미세 게이트 컨택홀을 갖는 질화물계 반도체 소자 및 그의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245280A (en) * 1975-10-07 1977-04-09 Sanyo Electric Co Ltd Field effect transistor of schottky barrier type
JPS5338982A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Taper etching method
JPS5397784A (en) * 1977-02-07 1978-08-26 Hughes Aircraft Co Nonnactive gate gaaas fet transistor and method of producing same
JPS54128283A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245280A (en) * 1975-10-07 1977-04-09 Sanyo Electric Co Ltd Field effect transistor of schottky barrier type
JPS5338982A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Taper etching method
JPS5397784A (en) * 1977-02-07 1978-08-26 Hughes Aircraft Co Nonnactive gate gaaas fet transistor and method of producing same
JPS54128283A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101219441B1 (ko) * 2010-12-27 2013-01-11 전자부품연구원 미세 게이트 컨택홀을 갖는 질화물계 반도체 소자 및 그의 제조 방법

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