JPS57149900A - Manufacture of gaas single crystal - Google Patents
Manufacture of gaas single crystalInfo
- Publication number
- JPS57149900A JPS57149900A JP3472581A JP3472581A JPS57149900A JP S57149900 A JPS57149900 A JP S57149900A JP 3472581 A JP3472581 A JP 3472581A JP 3472581 A JP3472581 A JP 3472581A JP S57149900 A JPS57149900 A JP S57149900A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gaas single
- manufacture
- sealant
- geo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a GaAs single crystal with lowered dislocation density in the manufacture of a GaAs single crystal rod by a liq. sealing and pulling method, by adding SiO2 or GeO2 to a B2O3 sealant.
CONSTITUTION: In the manufacture of a GaAs single crystal by a liq. sealing and pulling method, B2O3 mixed with SiO2 and/or GeO2 is used as a sealant, and the upper surface is kept at ≥1,050°C. Since the B2O3 sealant is provided with a raised m.p., that is, increased viscosity by the addition of SiO2 and/or GeO2 each of which is a high m.p. oxide, the temp. gradient of the sealant can be reduced. Accordingly, the temp. gradient of the crystal is reduced, and the dislocation density of the GaAs single crystal can be lowered.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3472581A JPS57149900A (en) | 1981-03-11 | 1981-03-11 | Manufacture of gaas single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3472581A JPS57149900A (en) | 1981-03-11 | 1981-03-11 | Manufacture of gaas single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57149900A true JPS57149900A (en) | 1982-09-16 |
Family
ID=12422290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3472581A Pending JPS57149900A (en) | 1981-03-11 | 1981-03-11 | Manufacture of gaas single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57149900A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60118699A (en) * | 1983-11-30 | 1985-06-26 | Sumitomo Electric Ind Ltd | Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal |
JPS6230697A (en) * | 1985-08-02 | 1987-02-09 | Agency Of Ind Science & Technol | Production of gaas single crystal |
JPS63201096A (en) * | 1987-02-13 | 1988-08-19 | Nippon Telegr & Teleph Corp <Ntt> | Production of crystal of compound semiconductor |
-
1981
- 1981-03-11 JP JP3472581A patent/JPS57149900A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60118699A (en) * | 1983-11-30 | 1985-06-26 | Sumitomo Electric Ind Ltd | Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal |
JPS6230697A (en) * | 1985-08-02 | 1987-02-09 | Agency Of Ind Science & Technol | Production of gaas single crystal |
JPH0317799B2 (en) * | 1985-08-02 | 1991-03-08 | Kogyo Gijutsuin | |
JPS63201096A (en) * | 1987-02-13 | 1988-08-19 | Nippon Telegr & Teleph Corp <Ntt> | Production of crystal of compound semiconductor |
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