JPS57149900A - Manufacture of gaas single crystal - Google Patents

Manufacture of gaas single crystal

Info

Publication number
JPS57149900A
JPS57149900A JP3472581A JP3472581A JPS57149900A JP S57149900 A JPS57149900 A JP S57149900A JP 3472581 A JP3472581 A JP 3472581A JP 3472581 A JP3472581 A JP 3472581A JP S57149900 A JPS57149900 A JP S57149900A
Authority
JP
Japan
Prior art keywords
single crystal
gaas single
manufacture
sealant
geo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3472581A
Other languages
Japanese (ja)
Inventor
Jiro Osaka
Hideo Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3472581A priority Critical patent/JPS57149900A/en
Publication of JPS57149900A publication Critical patent/JPS57149900A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a GaAs single crystal with lowered dislocation density in the manufacture of a GaAs single crystal rod by a liq. sealing and pulling method, by adding SiO2 or GeO2 to a B2O3 sealant.
CONSTITUTION: In the manufacture of a GaAs single crystal by a liq. sealing and pulling method, B2O3 mixed with SiO2 and/or GeO2 is used as a sealant, and the upper surface is kept at ≥1,050°C. Since the B2O3 sealant is provided with a raised m.p., that is, increased viscosity by the addition of SiO2 and/or GeO2 each of which is a high m.p. oxide, the temp. gradient of the sealant can be reduced. Accordingly, the temp. gradient of the crystal is reduced, and the dislocation density of the GaAs single crystal can be lowered.
COPYRIGHT: (C)1982,JPO&Japio
JP3472581A 1981-03-11 1981-03-11 Manufacture of gaas single crystal Pending JPS57149900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3472581A JPS57149900A (en) 1981-03-11 1981-03-11 Manufacture of gaas single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3472581A JPS57149900A (en) 1981-03-11 1981-03-11 Manufacture of gaas single crystal

Publications (1)

Publication Number Publication Date
JPS57149900A true JPS57149900A (en) 1982-09-16

Family

ID=12422290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3472581A Pending JPS57149900A (en) 1981-03-11 1981-03-11 Manufacture of gaas single crystal

Country Status (1)

Country Link
JP (1) JPS57149900A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118699A (en) * 1983-11-30 1985-06-26 Sumitomo Electric Ind Ltd Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal
JPS6230697A (en) * 1985-08-02 1987-02-09 Agency Of Ind Science & Technol Production of gaas single crystal
JPS63201096A (en) * 1987-02-13 1988-08-19 Nippon Telegr & Teleph Corp <Ntt> Production of crystal of compound semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118699A (en) * 1983-11-30 1985-06-26 Sumitomo Electric Ind Ltd Apparatus for producing callium arsenide single crystal and gallium arsenide single crystal
JPS6230697A (en) * 1985-08-02 1987-02-09 Agency Of Ind Science & Technol Production of gaas single crystal
JPH0317799B2 (en) * 1985-08-02 1991-03-08 Kogyo Gijutsuin
JPS63201096A (en) * 1987-02-13 1988-08-19 Nippon Telegr & Teleph Corp <Ntt> Production of crystal of compound semiconductor

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