JPS57149726A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57149726A
JPS57149726A JP3484381A JP3484381A JPS57149726A JP S57149726 A JPS57149726 A JP S57149726A JP 3484381 A JP3484381 A JP 3484381A JP 3484381 A JP3484381 A JP 3484381A JP S57149726 A JPS57149726 A JP S57149726A
Authority
JP
Japan
Prior art keywords
film
wafer
required thickness
furnace
outlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3484381A
Other languages
English (en)
Inventor
Nobutami Oka
Masaharu Aoyama
Takashi Yasujima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3484381A priority Critical patent/JPS57149726A/ja
Publication of JPS57149726A publication Critical patent/JPS57149726A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
JP3484381A 1981-03-11 1981-03-11 Manufacture of semiconductor device Pending JPS57149726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3484381A JPS57149726A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3484381A JPS57149726A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57149726A true JPS57149726A (en) 1982-09-16

Family

ID=12425466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3484381A Pending JPS57149726A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57149726A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01226149A (ja) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd 気相成長装置
JPH01246836A (ja) * 1988-03-29 1989-10-02 Tokyo Electron Ltd 熱処理方法
CN102290366A (zh) * 2010-06-18 2011-12-21 东京毅力科创株式会社 支承体构造及处理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01226149A (ja) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd 気相成長装置
JPH01246836A (ja) * 1988-03-29 1989-10-02 Tokyo Electron Ltd 熱処理方法
CN102290366A (zh) * 2010-06-18 2011-12-21 东京毅力科创株式会社 支承体构造及处理装置
JP2012004408A (ja) * 2010-06-18 2012-01-05 Tokyo Electron Ltd 支持体構造及び処理装置
CN104681467A (zh) * 2010-06-18 2015-06-03 东京毅力科创株式会社 支承体构造及处理装置

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