JPS57149726A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57149726A JPS57149726A JP3484381A JP3484381A JPS57149726A JP S57149726 A JPS57149726 A JP S57149726A JP 3484381 A JP3484381 A JP 3484381A JP 3484381 A JP3484381 A JP 3484381A JP S57149726 A JPS57149726 A JP S57149726A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wafer
- required thickness
- furnace
- outlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3484381A JPS57149726A (en) | 1981-03-11 | 1981-03-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3484381A JPS57149726A (en) | 1981-03-11 | 1981-03-11 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57149726A true JPS57149726A (en) | 1982-09-16 |
Family
ID=12425466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3484381A Pending JPS57149726A (en) | 1981-03-11 | 1981-03-11 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57149726A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226149A (ja) * | 1988-03-07 | 1989-09-08 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
JPH01246836A (ja) * | 1988-03-29 | 1989-10-02 | Tokyo Electron Ltd | 熱処理方法 |
CN102290366A (zh) * | 2010-06-18 | 2011-12-21 | 东京毅力科创株式会社 | 支承体构造及处理装置 |
-
1981
- 1981-03-11 JP JP3484381A patent/JPS57149726A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01226149A (ja) * | 1988-03-07 | 1989-09-08 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
JPH01246836A (ja) * | 1988-03-29 | 1989-10-02 | Tokyo Electron Ltd | 熱処理方法 |
CN102290366A (zh) * | 2010-06-18 | 2011-12-21 | 东京毅力科创株式会社 | 支承体构造及处理装置 |
JP2012004408A (ja) * | 2010-06-18 | 2012-01-05 | Tokyo Electron Ltd | 支持体構造及び処理装置 |
CN104681467A (zh) * | 2010-06-18 | 2015-06-03 | 东京毅力科创株式会社 | 支承体构造及处理装置 |
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