JPS57143798A - Programmable element - Google Patents

Programmable element

Info

Publication number
JPS57143798A
JPS57143798A JP2972781A JP2972781A JPS57143798A JP S57143798 A JPS57143798 A JP S57143798A JP 2972781 A JP2972781 A JP 2972781A JP 2972781 A JP2972781 A JP 2972781A JP S57143798 A JPS57143798 A JP S57143798A
Authority
JP
Japan
Prior art keywords
surely
write
flowing
memory cells
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2972781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS616476B2 (enExample
Inventor
Koji Ueno
Tamio Miyamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2972781A priority Critical patent/JPS57143798A/ja
Priority to DE8282301020T priority patent/DE3273919D1/de
Priority to EP82301020A priority patent/EP0059630B1/en
Priority to IE454/82A priority patent/IE53338B1/en
Priority to US06/353,356 priority patent/US4488261A/en
Publication of JPS57143798A publication Critical patent/JPS57143798A/ja
Publication of JPS616476B2 publication Critical patent/JPS616476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18Auxiliary circuits, e.g. for writing into memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP2972781A 1981-03-02 1981-03-02 Programmable element Granted JPS57143798A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2972781A JPS57143798A (en) 1981-03-02 1981-03-02 Programmable element
DE8282301020T DE3273919D1 (en) 1981-03-02 1982-03-01 Field programmable device
EP82301020A EP0059630B1 (en) 1981-03-02 1982-03-01 Field programmable device
IE454/82A IE53338B1 (en) 1981-03-02 1982-03-01 Field programmable device
US06/353,356 US4488261A (en) 1981-03-02 1982-03-01 Field programmable device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2972781A JPS57143798A (en) 1981-03-02 1981-03-02 Programmable element

Publications (2)

Publication Number Publication Date
JPS57143798A true JPS57143798A (en) 1982-09-06
JPS616476B2 JPS616476B2 (enExample) 1986-02-26

Family

ID=12284128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2972781A Granted JPS57143798A (en) 1981-03-02 1981-03-02 Programmable element

Country Status (5)

Country Link
US (1) US4488261A (enExample)
EP (1) EP0059630B1 (enExample)
JP (1) JPS57143798A (enExample)
DE (1) DE3273919D1 (enExample)
IE (1) IE53338B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592291A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd プログラマブル・リ−ドオンリ・メモリ装置
JPS61150199A (ja) * 1984-12-25 1986-07-08 Nec Corp 半導体記憶装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922295A (ja) * 1982-06-30 1984-02-04 Fujitsu Ltd 半導体記憶装置
DE3409776A1 (de) * 1983-03-17 1984-09-20 ROMOX Inc., Campbell, Calif. In einer kassette angeordneter, wiederprogrammierbarer speicher sowie verfahren zu dessen programmierung
JPS6095799A (ja) * 1983-10-31 1985-05-29 Nec Corp プログラマブル・リ−ド・オンリ−・メモリ
FR2623016B1 (fr) * 1987-11-06 1991-06-14 Thomson Semiconducteurs Dispositif de fusion d'un fusible dans un circuit integre de type cmos
US5892683A (en) * 1993-03-31 1999-04-06 Altera Coporation Program compatibility recognition for a programmable logic device
WO2004090909A1 (ja) * 1994-12-27 2004-10-21 Nobufumi Inada 情報記憶装置およびその動作方法
US7376008B2 (en) * 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742592A (en) * 1970-07-13 1973-07-03 Intersil Inc Electrically alterable integrated circuit read only memory unit and process of manufacturing
US3733690A (en) * 1970-07-13 1973-05-22 Intersil Inc Double junction read only memory and process of manufacture
JPS55142475A (en) * 1979-04-23 1980-11-07 Fujitsu Ltd Decoder circuit
JPS5828680B2 (ja) * 1979-04-27 1983-06-17 富士通株式会社 半導体記憶装置
US4237547A (en) * 1979-09-17 1980-12-02 Motorola, Inc. Program decoder for shared contact eprom
US4312047A (en) * 1980-05-29 1982-01-19 Motorola, Inc. Memory array having improved isolation between sense lines

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592291A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd プログラマブル・リ−ドオンリ・メモリ装置
JPS61150199A (ja) * 1984-12-25 1986-07-08 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
US4488261A (en) 1984-12-11
IE53338B1 (en) 1988-10-26
EP0059630A2 (en) 1982-09-08
EP0059630A3 (en) 1983-10-19
IE820454L (en) 1982-09-02
JPS616476B2 (enExample) 1986-02-26
EP0059630B1 (en) 1986-10-22
DE3273919D1 (en) 1986-11-27

Similar Documents

Publication Publication Date Title
US4393481A (en) Nonvolatile static random access memory system
JPS5654693A (en) Programable rom
TW367503B (en) Non-volatile semiconductor device
DE3279868D1 (en) Semiconductor memory device having a programming circuit
DE3578989D1 (de) Halbleiterspeichergeraet mit schreibepruefoperation.
JPS5538016A (en) Semiconductor memory device
JPS57143798A (en) Programmable element
US4583201A (en) Resistor personalized memory device using a resistive gate fet
DE3070056D1 (en) Semiconductor memory device including integrated injection logic memory cells
US4595999A (en) Non-volatile random access memory cell with CMOS transistors having a common floating grid
ES461619A1 (es) Perfeccionamientos en aparatos semiconductores.
US4651303A (en) Non-volatile memory cell
DE3680728D1 (de) Halbleiterspeicherschaltung mit einem vorspannungsgenerator.
WO1984000262A1 (en) Substrate bias pump
JPS56140591A (en) Semiconductor memeory device
JPS57194569A (en) Schottky diode polysilicon resistor memory cell
DE3615310C2 (de) Vorladeschaltung für Wortleitungen eines Speichersystems
DE3070152D1 (en) Semiconductor memory device including integrated injection logic memory cells
JPS551672A (en) Initial reset circuit
EP0206576A3 (en) Improvements in semiconductor memories
DE3586766D1 (de) Nichtfluechtige halbleiterspeicherzelle.
IE57597B1 (en) Non-volatile,programmable,static memory cell and a non-volatile,programmable static memory
JPS57123594A (en) Readout control circuit for semiconductor nonvolatile memory
DE2447350C2 (de) Speicher
JPS55146697A (en) Writing circuit for junction destructive p-rom