IE53338B1 - Field programmable device - Google Patents
Field programmable deviceInfo
- Publication number
- IE53338B1 IE53338B1 IE454/82A IE45482A IE53338B1 IE 53338 B1 IE53338 B1 IE 53338B1 IE 454/82 A IE454/82 A IE 454/82A IE 45482 A IE45482 A IE 45482A IE 53338 B1 IE53338 B1 IE 53338B1
- Authority
- IE
- Ireland
- Prior art keywords
- word
- transistor
- bit line
- power source
- word lines
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2972781A JPS57143798A (en) | 1981-03-02 | 1981-03-02 | Programmable element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE820454L IE820454L (en) | 1982-09-02 |
| IE53338B1 true IE53338B1 (en) | 1988-10-26 |
Family
ID=12284128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE454/82A IE53338B1 (en) | 1981-03-02 | 1982-03-01 | Field programmable device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4488261A (enExample) |
| EP (1) | EP0059630B1 (enExample) |
| JP (1) | JPS57143798A (enExample) |
| DE (1) | DE3273919D1 (enExample) |
| IE (1) | IE53338B1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592291A (ja) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | プログラマブル・リ−ドオンリ・メモリ装置 |
| JPS5922295A (ja) * | 1982-06-30 | 1984-02-04 | Fujitsu Ltd | 半導体記憶装置 |
| DE3409776A1 (de) * | 1983-03-17 | 1984-09-20 | ROMOX Inc., Campbell, Calif. | In einer kassette angeordneter, wiederprogrammierbarer speicher sowie verfahren zu dessen programmierung |
| JPS6095799A (ja) * | 1983-10-31 | 1985-05-29 | Nec Corp | プログラマブル・リ−ド・オンリ−・メモリ |
| JPS61150199A (ja) * | 1984-12-25 | 1986-07-08 | Nec Corp | 半導体記憶装置 |
| FR2623016B1 (fr) * | 1987-11-06 | 1991-06-14 | Thomson Semiconducteurs | Dispositif de fusion d'un fusible dans un circuit integre de type cmos |
| US5892683A (en) * | 1993-03-31 | 1999-04-06 | Altera Coporation | Program compatibility recognition for a programmable logic device |
| WO2004090909A1 (ja) * | 1994-12-27 | 2004-10-21 | Nobufumi Inada | 情報記憶装置およびその動作方法 |
| US7376008B2 (en) * | 2003-08-07 | 2008-05-20 | Contour Seminconductor, Inc. | SCR matrix storage device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3742592A (en) * | 1970-07-13 | 1973-07-03 | Intersil Inc | Electrically alterable integrated circuit read only memory unit and process of manufacturing |
| US3733690A (en) * | 1970-07-13 | 1973-05-22 | Intersil Inc | Double junction read only memory and process of manufacture |
| JPS55142475A (en) * | 1979-04-23 | 1980-11-07 | Fujitsu Ltd | Decoder circuit |
| JPS5828680B2 (ja) * | 1979-04-27 | 1983-06-17 | 富士通株式会社 | 半導体記憶装置 |
| US4237547A (en) * | 1979-09-17 | 1980-12-02 | Motorola, Inc. | Program decoder for shared contact eprom |
| US4312047A (en) * | 1980-05-29 | 1982-01-19 | Motorola, Inc. | Memory array having improved isolation between sense lines |
-
1981
- 1981-03-02 JP JP2972781A patent/JPS57143798A/ja active Granted
-
1982
- 1982-03-01 US US06/353,356 patent/US4488261A/en not_active Expired - Fee Related
- 1982-03-01 IE IE454/82A patent/IE53338B1/en not_active IP Right Cessation
- 1982-03-01 EP EP82301020A patent/EP0059630B1/en not_active Expired
- 1982-03-01 DE DE8282301020T patent/DE3273919D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4488261A (en) | 1984-12-11 |
| EP0059630A2 (en) | 1982-09-08 |
| EP0059630A3 (en) | 1983-10-19 |
| JPS57143798A (en) | 1982-09-06 |
| IE820454L (en) | 1982-09-02 |
| JPS616476B2 (enExample) | 1986-02-26 |
| EP0059630B1 (en) | 1986-10-22 |
| DE3273919D1 (en) | 1986-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4347586A (en) | Semiconductor memory device | |
| JPS619895A (ja) | 半導体記憶回路 | |
| US4758994A (en) | On chip voltage regulator for common collector matrix programmable memory array | |
| US4024417A (en) | Integrated semiconductor structure with means to prevent unlimited current flow | |
| IE53338B1 (en) | Field programmable device | |
| JPS6131900B2 (enExample) | ||
| US3849675A (en) | Low power flip-flop circuits | |
| EP0100160B1 (en) | Semiconductor memory devices with word line discharging circuits | |
| US4432070A (en) | High speed PROM device | |
| US4599688A (en) | Semiconductor memory device having switching circuit for preventing channel leakage in constant current source | |
| EP0019381B1 (en) | Semiconductor memory device with address signal level setting | |
| US4980582A (en) | High speed ECL input buffer for vertical fuse arrays | |
| EP0028157B1 (en) | Semiconductor integrated circuit memory device with integrated injection logic | |
| JPH0156479B2 (enExample) | ||
| US3979735A (en) | Information storage circuit | |
| JPS582437B2 (ja) | スリ−ステイト出力回路 | |
| KR930011787B1 (ko) | 반도체 메모리 장치 | |
| EP0306663B1 (en) | Fast write saturated memory cell | |
| US4627034A (en) | Memory cell power scavenging apparatus and method | |
| EP0252780B1 (en) | Variable clamped memory cell | |
| US4039857A (en) | Dynamic biasing of isolation boat including diffused resistors | |
| US4899311A (en) | Clamping sense amplifier for bipolar ram | |
| IE52801B1 (en) | Semiconductor memory circuit device | |
| JPS581919Y2 (ja) | メモリ回路 | |
| US4891683A (en) | Integrated SCR current sourcing sinking device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Patent lapsed |