JPS57141954A - Manufacture of integrated circuit - Google Patents
Manufacture of integrated circuitInfo
- Publication number
- JPS57141954A JPS57141954A JP56170618A JP17061881A JPS57141954A JP S57141954 A JPS57141954 A JP S57141954A JP 56170618 A JP56170618 A JP 56170618A JP 17061881 A JP17061881 A JP 17061881A JP S57141954 A JPS57141954 A JP S57141954A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitance
- layer
- film
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56170618A JPS57141954A (en) | 1981-10-23 | 1981-10-23 | Manufacture of integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56170618A JPS57141954A (en) | 1981-10-23 | 1981-10-23 | Manufacture of integrated circuit |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51024791A Division JPS604595B2 (ja) | 1976-03-08 | 1976-03-08 | 集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57141954A true JPS57141954A (en) | 1982-09-02 |
JPS6131637B2 JPS6131637B2 (enrdf_load_html_response) | 1986-07-21 |
Family
ID=15908203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56170618A Granted JPS57141954A (en) | 1981-10-23 | 1981-10-23 | Manufacture of integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57141954A (enrdf_load_html_response) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105465A (ja) * | 1985-11-01 | 1987-05-15 | Toshiba Corp | 半導体装置の製造方法 |
-
1981
- 1981-10-23 JP JP56170618A patent/JPS57141954A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105465A (ja) * | 1985-11-01 | 1987-05-15 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6131637B2 (enrdf_load_html_response) | 1986-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56125868A (en) | Thin-film semiconductor device | |
JPS5696854A (en) | Semiconductor memory device | |
JPS5688354A (en) | Semiconductor integrated circuit device | |
JPS5710266A (en) | Mis field effect semiconductor device | |
JPS5799777A (en) | Metal oxide semiconductor type semiconductor device | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS57141954A (en) | Manufacture of integrated circuit | |
JPS57192063A (en) | Manufacture of semiconductor device | |
JPS5587481A (en) | Mis type semiconductor device | |
JPS5619671A (en) | Manufacture of insulated gate type field effect transistor | |
JPS5764965A (en) | Semiconductor device | |
JPS5788772A (en) | Vertical mis semiconductor device | |
KR970009617B1 (en) | Contact forming method of semiconductor device | |
JPS57149774A (en) | Semiconductor device | |
JPS5783059A (en) | Manufacture of mos type semiconductor device | |
JPS57104259A (en) | Metal oxide semiconductor device | |
JPS5882569A (ja) | 電界効果トランジスタ | |
JPS57100760A (en) | Manufacture of semiconductor device | |
JPS5660060A (en) | Mos semiconductor device | |
JPS57188866A (en) | Manufacture of semiconductor device | |
JPS57128957A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS57202783A (en) | Manufacture of insulated gate type field-effect transistor | |
JPS56150864A (en) | Semiconductor device | |
JPS55160455A (en) | Manufacture of insulated gate type field effect semiconductor device | |
JPS52146568A (en) | Production of silicon gate mos type semiconductor integrated circuit device |