JPS57134962A - Semiconductor memory and manufacture of the same - Google Patents
Semiconductor memory and manufacture of the sameInfo
- Publication number
- JPS57134962A JPS57134962A JP1992681A JP1992681A JPS57134962A JP S57134962 A JPS57134962 A JP S57134962A JP 1992681 A JP1992681 A JP 1992681A JP 1992681 A JP1992681 A JP 1992681A JP S57134962 A JPS57134962 A JP S57134962A
- Authority
- JP
- Japan
- Prior art keywords
- type
- base
- constitution
- contact holes
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Read Only Memory (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1992681A JPS57134962A (en) | 1981-02-13 | 1981-02-13 | Semiconductor memory and manufacture of the same |
US06/344,048 US4453233A (en) | 1981-02-13 | 1982-01-29 | Semiconductor memory device and method of manufacturing the same |
DE3205026A DE3205026C2 (de) | 1981-02-13 | 1982-02-12 | Halbleiterspeicher des Polysilicium-Sicherungstyps und Verfahren zu dessen Herstellung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1992681A JPS57134962A (en) | 1981-02-13 | 1981-02-13 | Semiconductor memory and manufacture of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57134962A true JPS57134962A (en) | 1982-08-20 |
Family
ID=12012824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1992681A Pending JPS57134962A (en) | 1981-02-13 | 1981-02-13 | Semiconductor memory and manufacture of the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US4453233A (ja) |
JP (1) | JPS57134962A (ja) |
DE (1) | DE3205026C2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3653005A (en) * | 1969-08-25 | 1972-03-28 | North Electric Co | Mechanical storage means for repertory dialer |
BE794202A (fr) * | 1972-01-19 | 1973-05-16 | Intel Corp | Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires |
US3835457A (en) * | 1972-12-07 | 1974-09-10 | Motorola Inc | Dynamic mos ttl compatible |
JPS5154789A (ja) * | 1974-11-09 | 1976-05-14 | Nippon Electric Co | |
NL176415C (nl) * | 1976-07-05 | 1985-04-01 | Hitachi Ltd | Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit. |
-
1981
- 1981-02-13 JP JP1992681A patent/JPS57134962A/ja active Pending
-
1982
- 1982-01-29 US US06/344,048 patent/US4453233A/en not_active Expired - Lifetime
- 1982-02-12 DE DE3205026A patent/DE3205026C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4453233A (en) | 1984-06-05 |
DE3205026C2 (de) | 1987-04-23 |
DE3205026A1 (de) | 1982-08-26 |
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