JPS57124731A - Negative type resist with dry etching resistance - Google Patents
Negative type resist with dry etching resistanceInfo
- Publication number
- JPS57124731A JPS57124731A JP1017081A JP1017081A JPS57124731A JP S57124731 A JPS57124731 A JP S57124731A JP 1017081 A JP1017081 A JP 1017081A JP 1017081 A JP1017081 A JP 1017081A JP S57124731 A JPS57124731 A JP S57124731A
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- polymer
- negative type
- etching resistance
- type resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
PURPOSE:To obtain a negative type resist material of high performance made of specified methacrylate polymer, forming a micropattern by electron beam or X-ray lithography, and applicable to dry etching. CONSTITUTION:A resist is formed with a polymer having repeating units represented by formulaI. Methacrylate corresponding to each unit of formulaI is prepared by reacting methacrylic acid or a reactive acid deriv. thereof with p-, m- or o-bromo- or -chloro-substituted phenol or benzyl alcohol. The dry etching resistance of the resulting resist material is produced by benzene rings having a protective effect in the polymer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1017081A JPS57124731A (en) | 1981-01-28 | 1981-01-28 | Negative type resist with dry etching resistance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1017081A JPS57124731A (en) | 1981-01-28 | 1981-01-28 | Negative type resist with dry etching resistance |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57124731A true JPS57124731A (en) | 1982-08-03 |
Family
ID=11742800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1017081A Pending JPS57124731A (en) | 1981-01-28 | 1981-01-28 | Negative type resist with dry etching resistance |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57124731A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58168047A (en) * | 1982-03-30 | 1983-10-04 | Somar Corp | Photosensitive material |
-
1981
- 1981-01-28 JP JP1017081A patent/JPS57124731A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58168047A (en) * | 1982-03-30 | 1983-10-04 | Somar Corp | Photosensitive material |
JPH0334057B2 (en) * | 1982-03-30 | 1991-05-21 | Somar Corp |
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