JPS57124476A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57124476A
JPS57124476A JP56009085A JP908581A JPS57124476A JP S57124476 A JPS57124476 A JP S57124476A JP 56009085 A JP56009085 A JP 56009085A JP 908581 A JP908581 A JP 908581A JP S57124476 A JPS57124476 A JP S57124476A
Authority
JP
Japan
Prior art keywords
ions
base body
film
silicide
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56009085A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237093B2 (enExample
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56009085A priority Critical patent/JPS57124476A/ja
Publication of JPS57124476A publication Critical patent/JPS57124476A/ja
Priority to US06/645,536 priority patent/US4622735A/en
Priority to US06/832,647 priority patent/US4830971A/en
Publication of JPH0237093B2 publication Critical patent/JPH0237093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H10D64/0112—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10P76/4085—

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP56009085A 1980-12-12 1981-01-26 Manufacture of semiconductor device Granted JPS57124476A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56009085A JPS57124476A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device
US06/645,536 US4622735A (en) 1980-12-12 1984-08-29 Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
US06/832,647 US4830971A (en) 1980-12-12 1986-02-25 Method for manufacturing a semiconductor device utilizing self-aligned contact regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56009085A JPS57124476A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57124476A true JPS57124476A (en) 1982-08-03
JPH0237093B2 JPH0237093B2 (enExample) 1990-08-22

Family

ID=11710773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56009085A Granted JPS57124476A (en) 1980-12-12 1981-01-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124476A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161372A (ja) * 1982-02-10 1983-09-24 Nec Corp Ｍｏｓ集積回路の製造方法
JPS5999774A (ja) * 1982-11-29 1984-06-08 Fujitsu Ltd 半導体装置の製造方法
JPS59172775A (ja) * 1983-03-23 1984-09-29 Toshiba Corp 半導体装置とその製造方法
JPS6037770A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置
JPS60501083A (ja) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド 半導体装置の製造方法
JPS61129873A (ja) * 1984-11-28 1986-06-17 Seiko Epson Corp 半導体製造装置
JPS624371A (ja) * 1985-06-28 1987-01-10 ノ−ザン・テレコム・リミテツド 耐熱金属珪化物を用いてｖｌｓｉ回路を製造する方法
JPS62162362A (ja) * 1986-01-10 1987-07-18 Mitsubishi Electric Corp Ｍｏｓ型集積回路及びその製造方法
JPS641283A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH01298768A (ja) * 1988-05-27 1989-12-01 Sony Corp Ｍｉｓトランジスタの製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161372A (ja) * 1982-02-10 1983-09-24 Nec Corp Ｍｏｓ集積回路の製造方法
JPS5999774A (ja) * 1982-11-29 1984-06-08 Fujitsu Ltd 半導体装置の製造方法
JPS59172775A (ja) * 1983-03-23 1984-09-29 Toshiba Corp 半導体装置とその製造方法
JPS60501083A (ja) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド 半導体装置の製造方法
JPS6037770A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置
JPS61129873A (ja) * 1984-11-28 1986-06-17 Seiko Epson Corp 半導体製造装置
JPS624371A (ja) * 1985-06-28 1987-01-10 ノ−ザン・テレコム・リミテツド 耐熱金属珪化物を用いてｖｌｓｉ回路を製造する方法
JPS62162362A (ja) * 1986-01-10 1987-07-18 Mitsubishi Electric Corp Ｍｏｓ型集積回路及びその製造方法
JPS641283A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH01298768A (ja) * 1988-05-27 1989-12-01 Sony Corp Ｍｉｓトランジスタの製造方法

Also Published As

Publication number Publication date
JPH0237093B2 (enExample) 1990-08-22

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