JPS57122513A - Method for vapor growth of semiconductor - Google Patents

Method for vapor growth of semiconductor

Info

Publication number
JPS57122513A
JPS57122513A JP785381A JP785381A JPS57122513A JP S57122513 A JPS57122513 A JP S57122513A JP 785381 A JP785381 A JP 785381A JP 785381 A JP785381 A JP 785381A JP S57122513 A JPS57122513 A JP S57122513A
Authority
JP
Japan
Prior art keywords
gas supply
gas
wafers
nozzles
rotating shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP785381A
Other languages
English (en)
Inventor
Takashi Aoyama
Takaya Suzuki
Hironori Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP785381A priority Critical patent/JPS57122513A/ja
Publication of JPS57122513A publication Critical patent/JPS57122513A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
JP785381A 1981-01-23 1981-01-23 Method for vapor growth of semiconductor Pending JPS57122513A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP785381A JPS57122513A (en) 1981-01-23 1981-01-23 Method for vapor growth of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP785381A JPS57122513A (en) 1981-01-23 1981-01-23 Method for vapor growth of semiconductor

Publications (1)

Publication Number Publication Date
JPS57122513A true JPS57122513A (en) 1982-07-30

Family

ID=11677179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP785381A Pending JPS57122513A (en) 1981-01-23 1981-01-23 Method for vapor growth of semiconductor

Country Status (1)

Country Link
JP (1) JPS57122513A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190436A (ja) * 1984-10-11 1986-05-08 Oki Electric Ind Co Ltd 化学気相成長装置
EP0636705A2 (en) * 1993-07-27 1995-02-01 Shin-Etsu Handotai Company Limited A vertical type vapor phase growth apparatus
KR20030095801A (ko) * 2002-06-14 2003-12-24 주성엔지니어링(주) 회전형 분사기를 가지는 ｈｄｐ­ｃｖｄ 장치 및 이를이용한 갭 필링 방법
KR100458982B1 (ko) * 2000-08-09 2004-12-03 주성엔지니어링(주) 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법
KR100531555B1 (ko) * 2002-02-14 2005-11-28 주성엔지니어링(주) 회전가능한 1개 이상의 가스분사기가 구비된 박막증착장치 및 이를 이용한 박막 증착방법
CN102277561A (zh) * 2010-06-14 2011-12-14 硅绝缘体技术有限公司 用于多个基板的气体处理的系统和方法
WO2013162717A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Gas distribution module for insertion in lateral flow chambers
WO2023175826A1 (ja) * 2022-03-17 2023-09-21 株式会社Kokusai Electric 基板処理装置、ガスノズル、半導体装置の製造方法、基板処理方法及びプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer
JPS54144867A (en) * 1978-05-04 1979-11-12 Hitachi Ltd Gas phase growth method of semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer
JPS54144867A (en) * 1978-05-04 1979-11-12 Hitachi Ltd Gas phase growth method of semiconductor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190436A (ja) * 1984-10-11 1986-05-08 Oki Electric Ind Co Ltd 化学気相成長装置
EP0636705A2 (en) * 1993-07-27 1995-02-01 Shin-Etsu Handotai Company Limited A vertical type vapor phase growth apparatus
EP0636705A3 (en) * 1993-07-27 1996-03-13 Shinetsu Handotai Kk Vertical vapor deposition device.
KR100458982B1 (ko) * 2000-08-09 2004-12-03 주성엔지니어링(주) 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법
KR100531555B1 (ko) * 2002-02-14 2005-11-28 주성엔지니어링(주) 회전가능한 1개 이상의 가스분사기가 구비된 박막증착장치 및 이를 이용한 박막 증착방법
KR20030095801A (ko) * 2002-06-14 2003-12-24 주성엔지니어링(주) 회전형 분사기를 가지는 ｈｄｐ­ｃｖｄ 장치 및 이를이용한 갭 필링 방법
CN102277561A (zh) * 2010-06-14 2011-12-14 硅绝缘体技术有限公司 用于多个基板的气体处理的系统和方法
WO2013162717A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Gas distribution module for insertion in lateral flow chambers
TWI596228B (zh) * 2012-04-25 2017-08-21 應用材料股份有限公司 用於嵌入在橫向流腔室中的氣體分配模組
WO2023175826A1 (ja) * 2022-03-17 2023-09-21 株式会社Kokusai Electric 基板処理装置、ガスノズル、半導体装置の製造方法、基板処理方法及びプログラム

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