JPS5711899A - Molecular beam epitaxial growth - Google Patents

Molecular beam epitaxial growth

Info

Publication number
JPS5711899A
JPS5711899A JP8533680A JP8533680A JPS5711899A JP S5711899 A JPS5711899 A JP S5711899A JP 8533680 A JP8533680 A JP 8533680A JP 8533680 A JP8533680 A JP 8533680A JP S5711899 A JPS5711899 A JP S5711899A
Authority
JP
Japan
Prior art keywords
base plate
temperature
epitaxial growth
metallized
supporter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8533680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS632920B2 (enrdf_load_stackoverflow
Inventor
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8533680A priority Critical patent/JPS5711899A/ja
Publication of JPS5711899A publication Critical patent/JPS5711899A/ja
Publication of JPS632920B2 publication Critical patent/JPS632920B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8533680A 1980-06-24 1980-06-24 Molecular beam epitaxial growth Granted JPS5711899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8533680A JPS5711899A (en) 1980-06-24 1980-06-24 Molecular beam epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8533680A JPS5711899A (en) 1980-06-24 1980-06-24 Molecular beam epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5711899A true JPS5711899A (en) 1982-01-21
JPS632920B2 JPS632920B2 (enrdf_load_stackoverflow) 1988-01-21

Family

ID=13855791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8533680A Granted JPS5711899A (en) 1980-06-24 1980-06-24 Molecular beam epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5711899A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172715A (ja) * 1983-03-22 1984-09-29 Nec Corp 分子線発生装置
JPS61212228A (ja) * 1985-03-12 1986-09-20 キヤンベル　ス−プ　カンパニ− マツシユル−ム生育用栄養体およびその製造法
JPH0867596A (ja) * 1994-08-30 1996-03-12 Nec Corp 分子線エピタキシー装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101779A (en) * 1978-01-16 1979-08-10 Western Electric Co Epitaxial thin film growth method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101779A (en) * 1978-01-16 1979-08-10 Western Electric Co Epitaxial thin film growth method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172715A (ja) * 1983-03-22 1984-09-29 Nec Corp 分子線発生装置
JPS61212228A (ja) * 1985-03-12 1986-09-20 キヤンベル　ス−プ　カンパニ− マツシユル−ム生育用栄養体およびその製造法
JPH0867596A (ja) * 1994-08-30 1996-03-12 Nec Corp 分子線エピタキシー装置

Also Published As

Publication number Publication date
JPS632920B2 (enrdf_load_stackoverflow) 1988-01-21

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