JPS57117286A - Semiconductor hall element - Google Patents
Semiconductor hall elementInfo
- Publication number
- JPS57117286A JPS57117286A JP56003375A JP337581A JPS57117286A JP S57117286 A JPS57117286 A JP S57117286A JP 56003375 A JP56003375 A JP 56003375A JP 337581 A JP337581 A JP 337581A JP S57117286 A JPS57117286 A JP S57117286A
- Authority
- JP
- Japan
- Prior art keywords
- type
- electrodes
- voltage
- substrate
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Abstract
PURPOSE:To get rid of the dependency on temperature and to contrive to enhance sensitivity by a method wherein a thin layer having reverse conductive type to a substrate is provided on the substrate. CONSTITUTION:An N type thin film is formed on a P type substrate, source and drain electrodes 101, 103 are formed on both the sides thereof, and electrodes 201, 202 are formed on the surface interposing an oxide film 102 between them. A voltage is applied to the electrodes 201, 202 as to become higher from the right side toward the left side, and when the voltage under the respective electrodes in the depth direction is considered, the highest voltage point is generated in the N type layer, and the voltage can be made as to become higher toward the right side. Therefore electrons implanted from the source 201 reaches the drains 202 passing through the N type layer. Accordingly because electrons transfer in the N type region being separated from the interface between SiO2 and Si, electrons are not scattered by ions, etc., in the SiO2 film, and high mobility can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56003375A JPS57117286A (en) | 1981-01-13 | 1981-01-13 | Semiconductor hall element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56003375A JPS57117286A (en) | 1981-01-13 | 1981-01-13 | Semiconductor hall element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57117286A true JPS57117286A (en) | 1982-07-21 |
Family
ID=11555600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56003375A Pending JPS57117286A (en) | 1981-01-13 | 1981-01-13 | Semiconductor hall element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57117286A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008075795A (en) * | 2006-09-22 | 2008-04-03 | Japan Aviation Electronics Industry Ltd | Sucker sheet |
-
1981
- 1981-01-13 JP JP56003375A patent/JPS57117286A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008075795A (en) * | 2006-09-22 | 2008-04-03 | Japan Aviation Electronics Industry Ltd | Sucker sheet |
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