JPS57112013A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57112013A
JPS57112013A JP55187087A JP18708780A JPS57112013A JP S57112013 A JPS57112013 A JP S57112013A JP 55187087 A JP55187087 A JP 55187087A JP 18708780 A JP18708780 A JP 18708780A JP S57112013 A JPS57112013 A JP S57112013A
Authority
JP
Japan
Prior art keywords
substrate
impurity
liquid layer
unevenness
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55187087A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325496B2 (enExample
Inventor
Seiichiro Kawamura
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187087A priority Critical patent/JPS57112013A/ja
Publication of JPS57112013A publication Critical patent/JPS57112013A/ja
Publication of JPS6325496B2 publication Critical patent/JPS6325496B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/00—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP55187087A 1980-12-29 1980-12-29 Manufacture of semiconductor device Granted JPS57112013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187087A JPS57112013A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187087A JPS57112013A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57112013A true JPS57112013A (en) 1982-07-12
JPS6325496B2 JPS6325496B2 (enExample) 1988-05-25

Family

ID=16199882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187087A Granted JPS57112013A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112013A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01109199U (enExample) * 1988-01-16 1989-07-24
JPH0326997U (enExample) * 1989-07-27 1991-03-19

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566443A (en) * 1979-06-28 1981-01-23 Agency Of Ind Science & Technol Laser annealing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566443A (en) * 1979-06-28 1981-01-23 Agency Of Ind Science & Technol Laser annealing method

Also Published As

Publication number Publication date
JPS6325496B2 (enExample) 1988-05-25

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