JPS57110669A - Silicon nitride film - Google Patents
Silicon nitride filmInfo
- Publication number
- JPS57110669A JPS57110669A JP18536080A JP18536080A JPS57110669A JP S57110669 A JPS57110669 A JP S57110669A JP 18536080 A JP18536080 A JP 18536080A JP 18536080 A JP18536080 A JP 18536080A JP S57110669 A JPS57110669 A JP S57110669A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- silicon nitride
- metallic
- rates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To deposit metallic films of uniform thickness at the edge parts of silicon nitride layers by forming the silicon nitride layers provided on a substrate to two layered construction of a lower layer of a low rate of etching and an upper layer of a high rate of etching.
CONSTITUTION: In multilayered wiring or the like of a semiconductor device, a metallic wiring 3 is deposited via a silicon oxide layer 2 on a silicon substrate 1. Further, a lower layer silicon nitride film 41 of about 1μm film thickness and an upper layer silicon nitride film 42 of about 0.1μm film thickness are laminated on this, and the rates of etching are made higher with the film 42. Thence, photoresist 6 of prescribed patterns is provided on these and etching is carried out. Since the rates of etching of the film 42 and the film 41 differ, a taper is produced in the film 41 by the etching liquid penetrating through a window 5. Therefore, when a metallic film 7 is vapor deposited on this, the formation of an extremely thin part in film thickness on the film 7 is obviated, and the possibility of disconnection is eliminated.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18536080A JPS5944388B2 (en) | 1980-12-29 | 1980-12-29 | silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18536080A JPS5944388B2 (en) | 1980-12-29 | 1980-12-29 | silicon nitride film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57110669A true JPS57110669A (en) | 1982-07-09 |
| JPS5944388B2 JPS5944388B2 (en) | 1984-10-29 |
Family
ID=16169425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18536080A Expired JPS5944388B2 (en) | 1980-12-29 | 1980-12-29 | silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5944388B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62150936U (en) * | 1986-03-19 | 1987-09-24 |
-
1980
- 1980-12-29 JP JP18536080A patent/JPS5944388B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5944388B2 (en) | 1984-10-29 |
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