JPS57110669A - Silicon nitride film - Google Patents

Silicon nitride film

Info

Publication number
JPS57110669A
JPS57110669A JP18536080A JP18536080A JPS57110669A JP S57110669 A JPS57110669 A JP S57110669A JP 18536080 A JP18536080 A JP 18536080A JP 18536080 A JP18536080 A JP 18536080A JP S57110669 A JPS57110669 A JP S57110669A
Authority
JP
Japan
Prior art keywords
film
etching
silicon nitride
metallic
rates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18536080A
Other languages
Japanese (ja)
Other versions
JPS5944388B2 (en
Inventor
Takayuki Konuma
Kazuo Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Co Ltd
Original Assignee
FUJI DENKI SOUGOU KENKYUSHO KK
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUJI DENKI SOUGOU KENKYUSHO KK, Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical FUJI DENKI SOUGOU KENKYUSHO KK
Priority to JP18536080A priority Critical patent/JPS5944388B2/en
Publication of JPS57110669A publication Critical patent/JPS57110669A/en
Publication of JPS5944388B2 publication Critical patent/JPS5944388B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To deposit metallic films of uniform thickness at the edge parts of silicon nitride layers by forming the silicon nitride layers provided on a substrate to two layered construction of a lower layer of a low rate of etching and an upper layer of a high rate of etching.
CONSTITUTION: In multilayered wiring or the like of a semiconductor device, a metallic wiring 3 is deposited via a silicon oxide layer 2 on a silicon substrate 1. Further, a lower layer silicon nitride film 41 of about 1μm film thickness and an upper layer silicon nitride film 42 of about 0.1μm film thickness are laminated on this, and the rates of etching are made higher with the film 42. Thence, photoresist 6 of prescribed patterns is provided on these and etching is carried out. Since the rates of etching of the film 42 and the film 41 differ, a taper is produced in the film 41 by the etching liquid penetrating through a window 5. Therefore, when a metallic film 7 is vapor deposited on this, the formation of an extremely thin part in film thickness on the film 7 is obviated, and the possibility of disconnection is eliminated.
COPYRIGHT: (C)1982,JPO&Japio
JP18536080A 1980-12-29 1980-12-29 silicon nitride film Expired JPS5944388B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18536080A JPS5944388B2 (en) 1980-12-29 1980-12-29 silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18536080A JPS5944388B2 (en) 1980-12-29 1980-12-29 silicon nitride film

Publications (2)

Publication Number Publication Date
JPS57110669A true JPS57110669A (en) 1982-07-09
JPS5944388B2 JPS5944388B2 (en) 1984-10-29

Family

ID=16169425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18536080A Expired JPS5944388B2 (en) 1980-12-29 1980-12-29 silicon nitride film

Country Status (1)

Country Link
JP (1) JPS5944388B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150936U (en) * 1986-03-19 1987-09-24

Also Published As

Publication number Publication date
JPS5944388B2 (en) 1984-10-29

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