JPS57106186A - Josephson element - Google Patents

Josephson element

Info

Publication number
JPS57106186A
JPS57106186A JP55183073A JP18307380A JPS57106186A JP S57106186 A JPS57106186 A JP S57106186A JP 55183073 A JP55183073 A JP 55183073A JP 18307380 A JP18307380 A JP 18307380A JP S57106186 A JPS57106186 A JP S57106186A
Authority
JP
Japan
Prior art keywords
film
onto
insulating film
mos transistor
josephson element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55183073A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0217943B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55183073A priority Critical patent/JPS57106186A/ja
Publication of JPS57106186A publication Critical patent/JPS57106186A/ja
Publication of JPH0217943B2 publication Critical patent/JPH0217943B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP55183073A 1980-12-24 1980-12-24 Josephson element Granted JPS57106186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183073A JPS57106186A (en) 1980-12-24 1980-12-24 Josephson element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183073A JPS57106186A (en) 1980-12-24 1980-12-24 Josephson element

Publications (2)

Publication Number Publication Date
JPS57106186A true JPS57106186A (en) 1982-07-01
JPH0217943B2 JPH0217943B2 (enrdf_load_stackoverflow) 1990-04-24

Family

ID=16129273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183073A Granted JPS57106186A (en) 1980-12-24 1980-12-24 Josephson element

Country Status (1)

Country Link
JP (1) JPS57106186A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212212A (ja) * 1985-07-10 1987-01-21 Hitachi Ltd 超電導回路
US4843446A (en) * 1986-02-27 1989-06-27 Hitachi, Ltd. Superconducting photodetector
US5012303A (en) * 1983-11-30 1991-04-30 Fujitsu Limited Superconducting device
US5126315A (en) * 1987-02-27 1992-06-30 Hitachi, Ltd. High tc superconducting device with weak link between two superconducting electrodes
US5126801A (en) * 1984-11-05 1992-06-30 Hitachi, Ltd. Superconducting device
US5272358A (en) * 1986-08-13 1993-12-21 Hitachi, Ltd. Superconducting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220773A (en) * 1975-08-09 1977-02-16 Shinji Kawamichi Semi-conductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220773A (en) * 1975-08-09 1977-02-16 Shinji Kawamichi Semi-conductor element

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012303A (en) * 1983-11-30 1991-04-30 Fujitsu Limited Superconducting device
US5126801A (en) * 1984-11-05 1992-06-30 Hitachi, Ltd. Superconducting device
US5311036A (en) * 1984-11-05 1994-05-10 Hitachi, Ltd Superconducting device
JPS6212212A (ja) * 1985-07-10 1987-01-21 Hitachi Ltd 超電導回路
US4843446A (en) * 1986-02-27 1989-06-27 Hitachi, Ltd. Superconducting photodetector
US5272358A (en) * 1986-08-13 1993-12-21 Hitachi, Ltd. Superconducting device
US5126315A (en) * 1987-02-27 1992-06-30 Hitachi, Ltd. High tc superconducting device with weak link between two superconducting electrodes
US5552375A (en) * 1987-02-27 1996-09-03 Hitachi, Ltd. Method for forming high Tc superconducting devices
US6069369A (en) * 1987-02-27 2000-05-30 Hitachi, Ltd. Superconducting device

Also Published As

Publication number Publication date
JPH0217943B2 (enrdf_load_stackoverflow) 1990-04-24

Similar Documents

Publication Publication Date Title
JPS5658267A (en) Insulated gate type field-effect transistor
EP0270323A3 (en) A thin-film transistor
JPS6451665A (en) Semiconductor device
IE802615L (en) Thin film transistor
JPS57106186A (en) Josephson element
GB2016803A (en) Thin film transistor construction and manufacturing method of the same
JPS54146584A (en) Manufacture of semiconductor device
JPS5626470A (en) Field-effect transistor manufacturing process
JPS6435958A (en) Thin film transistor
JPS5619671A (en) Manufacture of insulated gate type field effect transistor
JPS55140262A (en) Semiconductor device
JPS6439065A (en) Thin film field-effect transistor
JPS56162873A (en) Insulated gate type field effect semiconductor device
JPS56147434A (en) Manufacture of semiconductor device
JPS55140270A (en) Insulated gate transistor
JPS5718363A (en) Msis type semiconductor element
JPS5643768A (en) Fet transistor and method of producing the same
JPS6461060A (en) Semiconductor device
JPS6453474A (en) Superconducting transistor
JPS5713766A (en) Manufacture of insulated gate type field effect transistor
JPS54159185A (en) Semiconductor device
JPS6420676A (en) Field-effect transistor
JPS5629369A (en) Insulated gate type field effect transistor
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS5710265A (en) Field effect transistor