JPS57104270A - Manufacture of constant-voltage element - Google Patents

Manufacture of constant-voltage element

Info

Publication number
JPS57104270A
JPS57104270A JP18046480A JP18046480A JPS57104270A JP S57104270 A JPS57104270 A JP S57104270A JP 18046480 A JP18046480 A JP 18046480A JP 18046480 A JP18046480 A JP 18046480A JP S57104270 A JPS57104270 A JP S57104270A
Authority
JP
Japan
Prior art keywords
pellets
electrodes
type layer
atm
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18046480A
Other languages
Japanese (ja)
Inventor
Toshiki Kurosu
Kunihiro Matsukuma
Satoshi Mikami
Hideyuki Yagi
Kenji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18046480A priority Critical patent/JPS57104270A/en
Publication of JPS57104270A publication Critical patent/JPS57104270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To contrive a manufacturing method making efficiently many semiconductor pellets having equal zener characteristics by a P-N junction with several to several tens of Zener voltage. CONSTITUTION:P is diffused to a P-type Si substrate of 10<19>-10<20>atm/cm<3> and an N-type layer of 15-50mum is obtained at 10<20>-10<21>atm/cm<3> and the N-type layer is split into many Si pellets 213 having predetermined size after forming Al layers 22, 23 of 5-15mum on the both sides of the N-type layer. The pellets are heated at the melting point exceeding that of Al under the condition that the pellets are inserted and pressed between block-shaped electrodes 24, 25 having leads 26, 27 of Cu or the like at one ends of the electrodes 24, 25, then the pellets and the electrodes 24, 25 (Mo, W, Fe-Ni alloy or the like) are adhered. This subassembly is performed by coating a glass member 28 on the Si pellets and at least the Si pellet sides of the electrodes 24, 25.
JP18046480A 1980-12-22 1980-12-22 Manufacture of constant-voltage element Pending JPS57104270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18046480A JPS57104270A (en) 1980-12-22 1980-12-22 Manufacture of constant-voltage element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18046480A JPS57104270A (en) 1980-12-22 1980-12-22 Manufacture of constant-voltage element

Publications (1)

Publication Number Publication Date
JPS57104270A true JPS57104270A (en) 1982-06-29

Family

ID=16083672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18046480A Pending JPS57104270A (en) 1980-12-22 1980-12-22 Manufacture of constant-voltage element

Country Status (1)

Country Link
JP (1) JPS57104270A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094780A (en) * 1983-10-28 1985-05-27 Hitachi Ltd Constant-voltage diode
US5946586A (en) * 1996-12-24 1999-08-31 U.S. Philips Corporation Method of manufacturing a glass-covered semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094780A (en) * 1983-10-28 1985-05-27 Hitachi Ltd Constant-voltage diode
US5946586A (en) * 1996-12-24 1999-08-31 U.S. Philips Corporation Method of manufacturing a glass-covered semiconductor device

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