JPS56169378A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56169378A
JPS56169378A JP7392680A JP7392680A JPS56169378A JP S56169378 A JPS56169378 A JP S56169378A JP 7392680 A JP7392680 A JP 7392680A JP 7392680 A JP7392680 A JP 7392680A JP S56169378 A JPS56169378 A JP S56169378A
Authority
JP
Japan
Prior art keywords
substrate
junction
isolating
printed
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7392680A
Other languages
Japanese (ja)
Other versions
JPS6159678B2 (en
Inventor
Akio Suzuki
Hiroyasu Sawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP7392680A priority Critical patent/JPS56169378A/en
Publication of JPS56169378A publication Critical patent/JPS56169378A/en
Publication of JPS6159678B2 publication Critical patent/JPS6159678B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To sufficiently stabilize the operation of a semiconductor device by melting and reacting an isolating material with a semiconductor substrate material, immersing it in the substrate, and forming an insulating isolating region material for isolating and cutting a P-N junction. CONSTITUTION:An isolating material 8 is printed around a region forming a substrate bearing electrode on the back surface of an Si semiconductor substrate 1 formed with a P-N junction 3. The material 8 can react preferably at the electrode baking temperature with the Si of the substrate 1 to melt the Si, can form insulating property and is glass powder having expansion coefficient similar to that of glass powder in the room temperature state at the using time. Ohmic and adhesive paste conductive material 9 is printed on the substrate 1 on which the material 8 is printed, and paste conductive material is printed on the surface surrounded by the material 8 on the back surface side. The isolating material is reacted with the substrate 1 at the heating step to melt the surface, the P-N junction surface and the substrate partly to form an insulating region 8', to isolate and cut the P-N junction continued from the light receiving surface and to form the other P-N junction independent from the one P-N junction.
JP7392680A 1980-05-30 1980-05-30 Semiconductor device Granted JPS56169378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7392680A JPS56169378A (en) 1980-05-30 1980-05-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7392680A JPS56169378A (en) 1980-05-30 1980-05-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56169378A true JPS56169378A (en) 1981-12-26
JPS6159678B2 JPS6159678B2 (en) 1986-12-17

Family

ID=13532227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7392680A Granted JPS56169378A (en) 1980-05-30 1980-05-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56169378A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035033A (en) * 2009-07-30 2011-02-17 Kyocera Corp Method of manufacturing solar cell element
JP2011151192A (en) * 2010-01-21 2011-08-04 Sharp Corp Solar cell, solar cell with interconnector, and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02145827A (en) * 1988-11-25 1990-06-05 Toyama Boseki Kk Spun yarn having double layer structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011035033A (en) * 2009-07-30 2011-02-17 Kyocera Corp Method of manufacturing solar cell element
JP2011151192A (en) * 2010-01-21 2011-08-04 Sharp Corp Solar cell, solar cell with interconnector, and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6159678B2 (en) 1986-12-17

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