JPS57104267A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57104267A
JPS57104267A JP55181004A JP18100480A JPS57104267A JP S57104267 A JPS57104267 A JP S57104267A JP 55181004 A JP55181004 A JP 55181004A JP 18100480 A JP18100480 A JP 18100480A JP S57104267 A JPS57104267 A JP S57104267A
Authority
JP
Japan
Prior art keywords
resist
hollow
gate electrode
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55181004A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6227754B2 (https=
Inventor
Masahiro Hagio
Atsushi Nagashima
Shutaro Nanbu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP55181004A priority Critical patent/JPS57104267A/ja
Publication of JPS57104267A publication Critical patent/JPS57104267A/ja
Publication of JPS6227754B2 publication Critical patent/JPS6227754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP55181004A 1980-12-19 1980-12-19 Manufacture of semiconductor device Granted JPS57104267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55181004A JPS57104267A (en) 1980-12-19 1980-12-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181004A JPS57104267A (en) 1980-12-19 1980-12-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57104267A true JPS57104267A (en) 1982-06-29
JPS6227754B2 JPS6227754B2 (https=) 1987-06-16

Family

ID=16093046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181004A Granted JPS57104267A (en) 1980-12-19 1980-12-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57104267A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224175A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381085A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381085A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224175A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6227754B2 (https=) 1987-06-16

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