JPS57100766A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS57100766A
JPS57100766A JP55177019A JP17701980A JPS57100766A JP S57100766 A JPS57100766 A JP S57100766A JP 55177019 A JP55177019 A JP 55177019A JP 17701980 A JP17701980 A JP 17701980A JP S57100766 A JPS57100766 A JP S57100766A
Authority
JP
Japan
Prior art keywords
thin film
film transistor
tin oxide
source
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55177019A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6212671B2 (enrdf_load_stackoverflow
Inventor
Mamoru Takeda
Isao Oota
Hiroshi Yamazoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55177019A priority Critical patent/JPS57100766A/ja
Publication of JPS57100766A publication Critical patent/JPS57100766A/ja
Publication of JPS6212671B2 publication Critical patent/JPS6212671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Bipolar Transistors (AREA)
JP55177019A 1980-12-15 1980-12-15 Thin film transistor Granted JPS57100766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177019A JPS57100766A (en) 1980-12-15 1980-12-15 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177019A JPS57100766A (en) 1980-12-15 1980-12-15 Thin film transistor

Publications (2)

Publication Number Publication Date
JPS57100766A true JPS57100766A (en) 1982-06-23
JPS6212671B2 JPS6212671B2 (enrdf_load_stackoverflow) 1987-03-19

Family

ID=16023730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177019A Granted JPS57100766A (en) 1980-12-15 1980-12-15 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS57100766A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965882A (ja) * 1982-10-06 1984-04-14 ホシデン株式会社 液晶表示器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965882A (ja) * 1982-10-06 1984-04-14 ホシデン株式会社 液晶表示器

Also Published As

Publication number Publication date
JPS6212671B2 (enrdf_load_stackoverflow) 1987-03-19

Similar Documents

Publication Publication Date Title
US4624737A (en) Process for producing thin-film transistor
JPS56135968A (en) Amorphous silicon thin film transistor and manufacture thereof
EP0157489A3 (en) Amorphous silicon field-effect transistors, method for their manufacture and their use in liquid crystal display devices
JPS56140321A (en) Display device
JPS56157075A (en) Photoelectric transducing device
JPS6435959A (en) Thin film transistor
JPS567480A (en) Film transistor
JPS6435961A (en) Thin film transistor
JPS5499576A (en) Thin-film transistor and its manufacture
JPS57100766A (en) Thin film transistor
JPS644070A (en) Thin film transistor and manufacture thereof
JPS6435958A (en) Thin film transistor
JPS57103358A (en) Manufacture of amorphous silicon mosfet
JPS57113296A (en) Switching element
JPS6435960A (en) Thin film transistor
JPS6411368A (en) Manufacture of thin film transistor
JPS6459863A (en) Semiconductor device
JPS5694671A (en) Manufacture of mis field-effect semiconductor device
JPS56146254A (en) Manufacture of semiconductor device
JPS6461061A (en) A-si thin film transistor
JPS57100768A (en) Manufacture of field effect semiconductor device
JPS55162270A (en) Semiconductor device
JPS5688366A (en) Semiconductor device
JPS57113291A (en) Solar cell panel
JPS52130580A (en) High densityintegrated circuit device