JPS6411368A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS6411368A
JPS6411368A JP62167277A JP16727787A JPS6411368A JP S6411368 A JPS6411368 A JP S6411368A JP 62167277 A JP62167277 A JP 62167277A JP 16727787 A JP16727787 A JP 16727787A JP S6411368 A JPS6411368 A JP S6411368A
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
source
films
type amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62167277A
Other languages
Japanese (ja)
Other versions
JPH0571175B2 (en
Inventor
Fujio Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62167277A priority Critical patent/JPS6411368A/en
Publication of JPS6411368A publication Critical patent/JPS6411368A/en
Publication of JPH0571175B2 publication Critical patent/JPH0571175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To largely improve yield and good productivity, to eliminate an anxiety of contamination of a device, and to further suppress the parasitic resistance of source, drain regions to one divided by several by continuously forming an amorphous silicon film and an N<+> type amorphous silicon film, avoiding the exposure of a photoresist with a plasma of glow discharge, and eliminating the use of a lifting OFF method. CONSTITUTION:A gate electrode 2 is formed on a glass substrate 1, and mixture gas is decomposed by a glow discharging method to continuously form a silicon nitride film 3, an amorphous silicon film 4 and an N<+> type amorphous silicon film 5. At least the films 4, 5 of the laminated films are insularly patterned. A silicon dioxide film 8 is formed by a glow discharging method, and a thin chromium silicide layer 11 is formed between the film 5 and the chromium. Eventually, source, drain electrodes 10 are formed to complete a thin film transistor. All the N<+> type amorphous silicon films are covered with low resistance silicide layers, and the source, drain regions are formed in a self-alignment manner.
JP62167277A 1987-07-03 1987-07-03 Manufacture of thin film transistor Granted JPS6411368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62167277A JPS6411368A (en) 1987-07-03 1987-07-03 Manufacture of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62167277A JPS6411368A (en) 1987-07-03 1987-07-03 Manufacture of thin film transistor

Publications (2)

Publication Number Publication Date
JPS6411368A true JPS6411368A (en) 1989-01-13
JPH0571175B2 JPH0571175B2 (en) 1993-10-06

Family

ID=15846762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62167277A Granted JPS6411368A (en) 1987-07-03 1987-07-03 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS6411368A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183854A (en) * 1988-01-19 1989-07-21 Toshiba Corp Thin-film transistor and manufacture thereof
JPH01303716A (en) * 1988-05-31 1989-12-07 Agency Of Ind Science & Technol Thin film formation
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
JPH04338651A (en) * 1991-05-15 1992-11-25 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH06252404A (en) * 1993-02-25 1994-09-09 Nec Corp Thin film transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183854A (en) * 1988-01-19 1989-07-21 Toshiba Corp Thin-film transistor and manufacture thereof
JPH01303716A (en) * 1988-05-31 1989-12-07 Agency Of Ind Science & Technol Thin film formation
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
JPH04338651A (en) * 1991-05-15 1992-11-25 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH06252404A (en) * 1993-02-25 1994-09-09 Nec Corp Thin film transistor

Also Published As

Publication number Publication date
JPH0571175B2 (en) 1993-10-06

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