JPS57100734A - Etching method for semiconductor substrate - Google Patents

Etching method for semiconductor substrate

Info

Publication number
JPS57100734A
JPS57100734A JP17667480A JP17667480A JPS57100734A JP S57100734 A JPS57100734 A JP S57100734A JP 17667480 A JP17667480 A JP 17667480A JP 17667480 A JP17667480 A JP 17667480A JP S57100734 A JPS57100734 A JP S57100734A
Authority
JP
Japan
Prior art keywords
etching
region
silicon dioxide
depth
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17667480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6359532B2 (enrdf_load_stackoverflow
Inventor
Shigeo Kodama
Takaaki Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17667480A priority Critical patent/JPS57100734A/ja
Publication of JPS57100734A publication Critical patent/JPS57100734A/ja
Publication of JPS6359532B2 publication Critical patent/JPS6359532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP17667480A 1980-12-15 1980-12-15 Etching method for semiconductor substrate Granted JPS57100734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17667480A JPS57100734A (en) 1980-12-15 1980-12-15 Etching method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17667480A JPS57100734A (en) 1980-12-15 1980-12-15 Etching method for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS57100734A true JPS57100734A (en) 1982-06-23
JPS6359532B2 JPS6359532B2 (enrdf_load_stackoverflow) 1988-11-21

Family

ID=16017733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17667480A Granted JPS57100734A (en) 1980-12-15 1980-12-15 Etching method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57100734A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683546A (en) * 1992-10-23 1997-11-04 Ricoh Seiki Company, Ltd. Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
CN109445245A (zh) * 2018-10-15 2019-03-08 上海华虹宏力半导体制造有限公司 一种掩模板、晶圆、晶粒以及等离子刻蚀裂片的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683546A (en) * 1992-10-23 1997-11-04 Ricoh Seiki Company, Ltd. Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
CN109445245A (zh) * 2018-10-15 2019-03-08 上海华虹宏力半导体制造有限公司 一种掩模板、晶圆、晶粒以及等离子刻蚀裂片的方法

Also Published As

Publication number Publication date
JPS6359532B2 (enrdf_load_stackoverflow) 1988-11-21

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