JPS5698866A - Buried channel charge coupled semiconductor device - Google Patents

Buried channel charge coupled semiconductor device

Info

Publication number
JPS5698866A
JPS5698866A JP118480A JP118480A JPS5698866A JP S5698866 A JPS5698866 A JP S5698866A JP 118480 A JP118480 A JP 118480A JP 118480 A JP118480 A JP 118480A JP S5698866 A JPS5698866 A JP S5698866A
Authority
JP
Japan
Prior art keywords
region
channel
linear
buried channel
phosphur
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP118480A
Other languages
Japanese (ja)
Other versions
JPH0127593B2 (en
Inventor
Hiroo Wakaumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP118480A priority Critical patent/JPS5698866A/en
Publication of JPS5698866A publication Critical patent/JPS5698866A/en
Publication of JPH0127593B2 publication Critical patent/JPH0127593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Shift Register Type Memory (AREA)

Abstract

PURPOSE:To prevent the drop in transfer efficiency at high velocity, by constituting the bend part of the buried channel with the CCDs, making longer the average longitudinal length of the electrode channel on the bend part active channel than the linear channel part and making its width same as the linear part. CONSTITUTION:On the P type semiconductor substrate the field part consisting of the thick field oxides film 40 and the P<+> type region 41 below the former is formed. In the substrate surrounded by the above, the N type buried channel region 11 consisting of the stack layer 43 with only the dose of phosphur and the barrier region 44 with the dose of boron besides phosphur is formed. Because the potential is lower in the region 44 than in the stack layer 44, the charge transfer is limited in the direction from P to P', forming the series of transfer electrodes 12-16, 17-21 in the region 11 by means of the oxides film. In this formation the bend part is formed in the channel region 11. The length of the electrode mounted on it is longer than that on the linear part and its width is the same as that on the linear part.
JP118480A 1980-01-09 1980-01-09 Buried channel charge coupled semiconductor device Granted JPS5698866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP118480A JPS5698866A (en) 1980-01-09 1980-01-09 Buried channel charge coupled semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP118480A JPS5698866A (en) 1980-01-09 1980-01-09 Buried channel charge coupled semiconductor device

Publications (2)

Publication Number Publication Date
JPS5698866A true JPS5698866A (en) 1981-08-08
JPH0127593B2 JPH0127593B2 (en) 1989-05-30

Family

ID=11494358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP118480A Granted JPS5698866A (en) 1980-01-09 1980-01-09 Buried channel charge coupled semiconductor device

Country Status (1)

Country Link
JP (1) JPS5698866A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028265A (en) * 1983-07-27 1985-02-13 Canon Inc Charge transfer device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561068A (en) * 1978-10-30 1980-05-08 Matsushita Electronics Corp Charge transfer device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561068A (en) * 1978-10-30 1980-05-08 Matsushita Electronics Corp Charge transfer device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028265A (en) * 1983-07-27 1985-02-13 Canon Inc Charge transfer device
JPH035673B2 (en) * 1983-07-27 1991-01-28 Canon Kk

Also Published As

Publication number Publication date
JPH0127593B2 (en) 1989-05-30

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