JPS552745B2 - - Google Patents
Info
- Publication number
- JPS552745B2 JPS552745B2 JP14324576A JP14324576A JPS552745B2 JP S552745 B2 JPS552745 B2 JP S552745B2 JP 14324576 A JP14324576 A JP 14324576A JP 14324576 A JP14324576 A JP 14324576A JP S552745 B2 JPS552745 B2 JP S552745B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- concentration
- infra
- pattern
- transfer electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 abstract 3
- 239000002800 charge carrier Substances 0.000 abstract 2
- 238000003384 imaging method Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 230000005284 excitation Effects 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/7685—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PHB. 32,531. A bulk channel imaging charge coupled device for example for converting an infra-red radiation pattern into electrical signals, wherein the layer in which packets of majority charge carriers representative of pattern information are generated and transported to an output comprises, in addition to the background doping concentration substantially determining the layer conductivity, a second impurity concentration provided at least locally and extending over only part of the thickness of the layer and consisting of at least one deep level impurity, said second concentration providing trapping centres for majority charge carriers which can be released by radiation excitation into potential minima occurring in the layer part spaced from the said part containing the second concentration. In one form the semiconductor body is of silicon and the second concentration is provided by an implanted concentration of indium adjacent the layer surface on which the insulated transfer electrodes are present, the device being constructed for imaging an infra-red pattern in the 3 to 5 micron band. In another form the deep level impurity concentration is provided adjacent the major side of the layer remote from the layer surface on which the insulated transfer electrodes are present, the layer at said surface comprising a more highly doped portion and providing for the possibility of a larger charge handling capability than the said one form.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB49089/75A GB1564107A (en) | 1976-11-05 | 1976-11-05 | Charge coupled devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5289490A JPS5289490A (en) | 1977-07-27 |
| JPS552745B2 true JPS552745B2 (en) | 1980-01-22 |
Family
ID=10451102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14324576A Granted JPS5289490A (en) | 1976-11-05 | 1976-11-29 | Charge coupled device |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5289490A (en) |
| AU (1) | AU504774B2 (en) |
| CA (1) | CA1096496A (en) |
| DE (1) | DE2653128A1 (en) |
| FR (1) | FR2333352A1 (en) |
| GB (1) | GB1564107A (en) |
| IT (1) | IT1064641B (en) |
| NL (1) | NL7613062A (en) |
| SE (1) | SE418434B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9726271B2 (en) | 2012-11-20 | 2017-08-08 | United Technologies Corporation | Hardened silver coated journal bearing surfaces and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL176406C (en) * | 1971-10-27 | 1985-04-01 | Philips Nv | Load-coupled semiconductor device having a semiconductor body comprising a semiconductor adjoining semiconductor layer and means for inputting information in the form of packages in the medium. |
| US3829885A (en) * | 1972-10-12 | 1974-08-13 | Zaidan Hojin Handotai Kenkyu | Charge coupled semiconductor memory device |
| DD114174A1 (en) * | 1973-10-03 | 1975-07-12 |
-
1976
- 1976-11-05 GB GB49089/75A patent/GB1564107A/en not_active Expired
- 1976-11-23 DE DE19762653128 patent/DE2653128A1/en active Granted
- 1976-11-23 AU AU19911/76A patent/AU504774B2/en not_active Expired
- 1976-11-24 CA CA266,509A patent/CA1096496A/en not_active Expired
- 1976-11-24 NL NL7613062A patent/NL7613062A/en not_active Application Discontinuation
- 1976-11-25 SE SE7613217A patent/SE418434B/en unknown
- 1976-11-25 IT IT7629784A patent/IT1064641B/en active
- 1976-11-29 JP JP14324576A patent/JPS5289490A/en active Granted
- 1976-11-29 FR FR7635911A patent/FR2333352A1/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9726271B2 (en) | 2012-11-20 | 2017-08-08 | United Technologies Corporation | Hardened silver coated journal bearing surfaces and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5289490A (en) | 1977-07-27 |
| GB1564107A (en) | 1980-04-02 |
| FR2333352B1 (en) | 1982-11-19 |
| SE418434B (en) | 1981-05-25 |
| CA1096496A (en) | 1981-02-24 |
| IT1064641B (en) | 1985-02-25 |
| DE2653128C2 (en) | 1987-04-16 |
| AU504774B2 (en) | 1979-10-25 |
| SE7613217L (en) | 1977-05-29 |
| DE2653128A1 (en) | 1977-06-23 |
| AU1991176A (en) | 1978-06-01 |
| FR2333352A1 (en) | 1977-06-24 |
| NL7613062A (en) | 1977-06-01 |
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