JPS5691445A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5691445A JPS5691445A JP16870779A JP16870779A JPS5691445A JP S5691445 A JPS5691445 A JP S5691445A JP 16870779 A JP16870779 A JP 16870779A JP 16870779 A JP16870779 A JP 16870779A JP S5691445 A JPS5691445 A JP S5691445A
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- electrode wiring
- spattering
- molybdenum
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a multilayer wiring of good quality by minimizing contact resistance, in the case of providing a contact between an electrode wiring and another electrode wiring using tantalum and niobium, etc., by allowing a high-melting- point metal and silicide to exist between them. CONSTITUTION:Boron ion is driven to form a source drain region 202 on an N type semiconductor substrate 201 and a gate electrode 204 is formed on a gate oxidation membrane 203 using such a substance as tantalum silicide. And then, a source drain electrode wiring 205 is formed by spattering tantalum, and surface of element is covered by a CVD silicon dioxide membrane 206. Further, the portion which is to be contacted is exposed and after spattering molybdenum 207 by approximately 5,000Angstrom , tantalum 208 is brazed by approximately 5,000Angstrom to form a multilayer wiring structure. As for the metal to be allowed to exist between them, any high- melting-point metal other than molybdenum can be used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870779A JPS5691445A (en) | 1979-12-25 | 1979-12-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870779A JPS5691445A (en) | 1979-12-25 | 1979-12-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5691445A true JPS5691445A (en) | 1981-07-24 |
Family
ID=15872952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16870779A Pending JPS5691445A (en) | 1979-12-25 | 1979-12-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5691445A (en) |
-
1979
- 1979-12-25 JP JP16870779A patent/JPS5691445A/en active Pending
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