JPS568877A - Charge coupling element - Google Patents
Charge coupling elementInfo
- Publication number
- JPS568877A JPS568877A JP8393279A JP8393279A JPS568877A JP S568877 A JPS568877 A JP S568877A JP 8393279 A JP8393279 A JP 8393279A JP 8393279 A JP8393279 A JP 8393279A JP S568877 A JPS568877 A JP S568877A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transfer
- interval
- oxide films
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To perform uniform and high speed charge transfer by selectively converting one side of a conductive film installed on an insulating film into an insulating film wherein the interval between transfer electrodes is remarkably shortened. CONSTITUTION:Doped poly-Sis 511a, 512a... with the width dc, interval dd are formed on the oxide thin film 2 of an N-type Si substrate and covered by a nitride film 7. The nitride film is etched to be in the condition of shifting by do in the direction of transfer and oxide films 8 with the thickness of t are formed. Selective etching is made for the nitride film 7 and an Al film is evaporated on whole of the surface to etch Al on the oxide films 8. Transfer electrodes composed by the combination of the high concentrated doped poly Si layers 511a... and Al film 511b... are insulted by the oxide films 8 and the interval between electrodes becomes the thickness of the film t from the view point of CCD operation. Because the interval is extremely small and the variation is minimized, high speed transfer is made possible and the transfer speed for each electrode is uniform, while high integration is also made possible.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8393279A JPS568877A (en) | 1979-07-04 | 1979-07-04 | Charge coupling element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8393279A JPS568877A (en) | 1979-07-04 | 1979-07-04 | Charge coupling element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS568877A true JPS568877A (en) | 1981-01-29 |
JPS6152587B2 JPS6152587B2 (en) | 1986-11-13 |
Family
ID=13816363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8393279A Granted JPS568877A (en) | 1979-07-04 | 1979-07-04 | Charge coupling element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568877A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574162A (en) * | 1980-06-10 | 1982-01-09 | Sony Corp | Manufacture of charge transfer device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5313951A (en) * | 1976-07-26 | 1978-02-08 | Citizen Watch Co Ltd | Watchcase |
-
1979
- 1979-07-04 JP JP8393279A patent/JPS568877A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5313951A (en) * | 1976-07-26 | 1978-02-08 | Citizen Watch Co Ltd | Watchcase |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS574162A (en) * | 1980-06-10 | 1982-01-09 | Sony Corp | Manufacture of charge transfer device |
Also Published As
Publication number | Publication date |
---|---|
JPS6152587B2 (en) | 1986-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6482570A (en) | Manufacture of photoelectric conversion device | |
JPS57100761A (en) | Semiconductor light sensitive device | |
JPS568877A (en) | Charge coupling element | |
JPS55154762A (en) | Semiconductor memory | |
JPS57204165A (en) | Manufacture of charge coupling element | |
JPS5649554A (en) | Manufacture of semiconductor memory | |
JPS6451671A (en) | Solar cell | |
JPS551136A (en) | Charge transfer system | |
JPS55120180A (en) | Fabricating method of photovoltaic device | |
JPS5793572A (en) | Manufacture of semiconductor device | |
JPS5713776A (en) | Photovoltaic device | |
JPS55165685A (en) | Microwave diode | |
JPS5784173A (en) | Manufacture of semicondcutor switch | |
JPS5556660A (en) | Manufacture of charge-coupled device | |
JPS56135979A (en) | Photosensing element | |
JPS57103358A (en) | Manufacture of amorphous silicon mosfet | |
JPS57197874A (en) | Optical electromotive force element | |
NL7705730A (en) | Target plate sensitive to radiation - is for TV tube and uses single process doping one face of silicon disc and removing material from other side | |
JPS551179A (en) | Complementary mis integrated circuit apparatus | |
JPS5660045A (en) | Semiconductor device | |
JPS56162887A (en) | Photocoupling type bidirectional high withstand voltage switch | |
JPS5778181A (en) | Semiconductor variable capacity element | |
JPS6422065A (en) | Manufacture of mis transistor | |
JPS55158648A (en) | Manufacture of semiconductor device | |
JPS5326591A (en) | Production of image pickup unit using charge transfer element |