JPS5326591A - Production of image pickup unit using charge transfer element - Google Patents

Production of image pickup unit using charge transfer element

Info

Publication number
JPS5326591A
JPS5326591A JP10092876A JP10092876A JPS5326591A JP S5326591 A JPS5326591 A JP S5326591A JP 10092876 A JP10092876 A JP 10092876A JP 10092876 A JP10092876 A JP 10092876A JP S5326591 A JPS5326591 A JP S5326591A
Authority
JP
Japan
Prior art keywords
image pickup
pickup unit
production
charge transfer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10092876A
Other languages
Japanese (ja)
Inventor
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10092876A priority Critical patent/JPS5326591A/en
Publication of JPS5326591A publication Critical patent/JPS5326591A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:A porous semiconductor layer of a prescribed thickness is formed within the prescribed region of the reverse face of a substrate by anode formation, and is eliminated from the substrate by etching after impurity is doped at a high density in this layer. As a result, the photosensitive area of the substrate becomes thin, so that an image pickup unit of the back illumination type where dark current and white damage occurrence is reduced can be obtianed.
JP10092876A 1976-08-24 1976-08-24 Production of image pickup unit using charge transfer element Pending JPS5326591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10092876A JPS5326591A (en) 1976-08-24 1976-08-24 Production of image pickup unit using charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10092876A JPS5326591A (en) 1976-08-24 1976-08-24 Production of image pickup unit using charge transfer element

Publications (1)

Publication Number Publication Date
JPS5326591A true JPS5326591A (en) 1978-03-11

Family

ID=14287002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10092876A Pending JPS5326591A (en) 1976-08-24 1976-08-24 Production of image pickup unit using charge transfer element

Country Status (1)

Country Link
JP (1) JPS5326591A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1048939A1 (en) * 1998-01-16 2000-11-02 Hamamatsu Photonics K.K. Imaging apparatus
US10428875B2 (en) 2014-03-22 2019-10-01 Ntn Corporation Cooling structure for bearing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1048939A1 (en) * 1998-01-16 2000-11-02 Hamamatsu Photonics K.K. Imaging apparatus
US10428875B2 (en) 2014-03-22 2019-10-01 Ntn Corporation Cooling structure for bearing device

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