JPS5688339A - Dhd-sealed semiconductor device - Google Patents

Dhd-sealed semiconductor device

Info

Publication number
JPS5688339A
JPS5688339A JP16556579A JP16556579A JPS5688339A JP S5688339 A JPS5688339 A JP S5688339A JP 16556579 A JP16556579 A JP 16556579A JP 16556579 A JP16556579 A JP 16556579A JP S5688339 A JPS5688339 A JP S5688339A
Authority
JP
Japan
Prior art keywords
substrate
electrode
dhd
semiconductor device
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16556579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6346984B2 (enExample
Inventor
Kohei Yamada
Hiroshi Ikeda
Hideo Tanbara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16556579A priority Critical patent/JPS5688339A/ja
Publication of JPS5688339A publication Critical patent/JPS5688339A/ja
Publication of JPS6346984B2 publication Critical patent/JPS6346984B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16556579A 1979-12-21 1979-12-21 Dhd-sealed semiconductor device Granted JPS5688339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16556579A JPS5688339A (en) 1979-12-21 1979-12-21 Dhd-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16556579A JPS5688339A (en) 1979-12-21 1979-12-21 Dhd-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS5688339A true JPS5688339A (en) 1981-07-17
JPS6346984B2 JPS6346984B2 (enExample) 1988-09-20

Family

ID=15814771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16556579A Granted JPS5688339A (en) 1979-12-21 1979-12-21 Dhd-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS5688339A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144887A3 (de) * 1983-11-30 1985-07-17 Siemens Aktiengesellschaft Halbleiterbauelement mit höckerartigen, metallischen Anschlusskontakten und Mehrlagenverdrahtung
US4916084A (en) * 1987-07-13 1990-04-10 Kabushiki Kaisha Toshiba Method for manufacturing MOS semiconductor devices
EP0628998A1 (en) * 1993-05-28 1994-12-14 Kabushiki Kaisha Toshiba Wiring layer for semi conductor device and method for manufacturing the same
US5656542A (en) * 1993-05-28 1997-08-12 Kabushiki Kaisha Toshiba Method for manufacturing wiring in groove
JP2008205249A (ja) * 2007-02-21 2008-09-04 Renesas Technology Corp 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915382A (enExample) * 1972-03-27 1974-02-09
JPS4940108A (enExample) * 1972-08-17 1974-04-15
JPS5487470A (en) * 1977-12-24 1979-07-11 Fuji Electric Co Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915382A (enExample) * 1972-03-27 1974-02-09
JPS4940108A (enExample) * 1972-08-17 1974-04-15
JPS5487470A (en) * 1977-12-24 1979-07-11 Fuji Electric Co Ltd Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144887A3 (de) * 1983-11-30 1985-07-17 Siemens Aktiengesellschaft Halbleiterbauelement mit höckerartigen, metallischen Anschlusskontakten und Mehrlagenverdrahtung
US4916084A (en) * 1987-07-13 1990-04-10 Kabushiki Kaisha Toshiba Method for manufacturing MOS semiconductor devices
EP0628998A1 (en) * 1993-05-28 1994-12-14 Kabushiki Kaisha Toshiba Wiring layer for semi conductor device and method for manufacturing the same
US5500559A (en) * 1993-05-28 1996-03-19 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US5656542A (en) * 1993-05-28 1997-08-12 Kabushiki Kaisha Toshiba Method for manufacturing wiring in groove
JP2008205249A (ja) * 2007-02-21 2008-09-04 Renesas Technology Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6346984B2 (enExample) 1988-09-20

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