JPS54102880A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54102880A JPS54102880A JP828278A JP828278A JPS54102880A JP S54102880 A JPS54102880 A JP S54102880A JP 828278 A JP828278 A JP 828278A JP 828278 A JP828278 A JP 828278A JP S54102880 A JPS54102880 A JP S54102880A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- zenor
- substrate
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To simplify the manufacture extremely and to extablish the temperature compensation type diode with high reliability.
CONSTITUTION: The N epitaxial layer 11 is formed on the P+ type Si substrate 10, opening is made on the oxide film 12 at the surface, and the P+ isolation layer 13 and the P+ layer 16 are formed. The projection electrode 14 is formed on the layer 16 and the electrode 15 is made at the rear side. This pellet is pressed with dumet wires 8a and 8b and it is sealed in the glass tube 9. When a voltage is applied by taking the electrode 14 as negative and the electrode 15 as positive, the layers 16 and 11 are back biased and the layer 11 and the substrate 10 are forward biased, and excellent device having Zenor current of 10 mA, Zenor voltage of about 6 volts and temperature coefficient of 2 to 500 ppm/°C can be obtained and the yield rate is also excellent.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP828278A JPS54102880A (en) | 1978-01-30 | 1978-01-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP828278A JPS54102880A (en) | 1978-01-30 | 1978-01-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54102880A true JPS54102880A (en) | 1979-08-13 |
Family
ID=11688817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP828278A Pending JPS54102880A (en) | 1978-01-30 | 1978-01-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54102880A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107584A (en) * | 1980-01-29 | 1981-08-26 | Nec Home Electronics Ltd | Diode |
-
1978
- 1978-01-30 JP JP828278A patent/JPS54102880A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107584A (en) * | 1980-01-29 | 1981-08-26 | Nec Home Electronics Ltd | Diode |
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