JPS54102880A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54102880A
JPS54102880A JP828278A JP828278A JPS54102880A JP S54102880 A JPS54102880 A JP S54102880A JP 828278 A JP828278 A JP 828278A JP 828278 A JP828278 A JP 828278A JP S54102880 A JPS54102880 A JP S54102880A
Authority
JP
Japan
Prior art keywords
layer
electrode
zenor
substrate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP828278A
Other languages
Japanese (ja)
Inventor
Tatsumi Tamura
Yasuo Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP828278A priority Critical patent/JPS54102880A/en
Publication of JPS54102880A publication Critical patent/JPS54102880A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To simplify the manufacture extremely and to extablish the temperature compensation type diode with high reliability.
CONSTITUTION: The N epitaxial layer 11 is formed on the P+ type Si substrate 10, opening is made on the oxide film 12 at the surface, and the P+ isolation layer 13 and the P+ layer 16 are formed. The projection electrode 14 is formed on the layer 16 and the electrode 15 is made at the rear side. This pellet is pressed with dumet wires 8a and 8b and it is sealed in the glass tube 9. When a voltage is applied by taking the electrode 14 as negative and the electrode 15 as positive, the layers 16 and 11 are back biased and the layer 11 and the substrate 10 are forward biased, and excellent device having Zenor current of 10 mA, Zenor voltage of about 6 volts and temperature coefficient of 2 to 500 ppm/°C can be obtained and the yield rate is also excellent.
COPYRIGHT: (C)1979,JPO&Japio
JP828278A 1978-01-30 1978-01-30 Semiconductor device Pending JPS54102880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP828278A JPS54102880A (en) 1978-01-30 1978-01-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP828278A JPS54102880A (en) 1978-01-30 1978-01-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54102880A true JPS54102880A (en) 1979-08-13

Family

ID=11688817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP828278A Pending JPS54102880A (en) 1978-01-30 1978-01-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54102880A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107584A (en) * 1980-01-29 1981-08-26 Nec Home Electronics Ltd Diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107584A (en) * 1980-01-29 1981-08-26 Nec Home Electronics Ltd Diode

Similar Documents

Publication Publication Date Title
JPS53142196A (en) Bipolar type semiconductor device
JPS54102880A (en) Semiconductor device
JPS54142976A (en) Manufacture of semiconductor device
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS6451658A (en) Semiconductor device
JPS5575264A (en) Charge transfer element
JPS5533075A (en) Mesa semiconductor device
JPS54111287A (en) Resin seal planar-structure semiconductor element
JPS56148863A (en) Manufacture of semiconductor device
JPS644083A (en) Photovoltaic device
JPS5561063A (en) Schottky barrier diode built-in transistor
JPS5642390A (en) Formation of electrode on semiconductor device
JPS55151359A (en) Semiconductor device
JPS56112762A (en) Semiconductor device
JPS54141578A (en) Semiconductor device
JPS551158A (en) Semiconductor device
JPS5586155A (en) Semiconductor device having protective circuit
JPS5649576A (en) Schottky diode
JPS57143859A (en) Semiconductor device
JPS5414684A (en) Manufacture of schottky barrier diode
JPS5688374A (en) Evaporated thin film diode
JPS5468162A (en) Semiconductor device
JPS5712552A (en) High dielectric resisting semiconductor device
JPS5734374A (en) Semiconductor device
JPS5727055A (en) Semiconductor device