JPS5687667A - Reactive ion etching method - Google Patents

Reactive ion etching method

Info

Publication number
JPS5687667A
JPS5687667A JP16473079A JP16473079A JPS5687667A JP S5687667 A JPS5687667 A JP S5687667A JP 16473079 A JP16473079 A JP 16473079A JP 16473079 A JP16473079 A JP 16473079A JP S5687667 A JPS5687667 A JP S5687667A
Authority
JP
Japan
Prior art keywords
sample
silicon
bonds
ion etching
deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16473079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225757B2 (ko
Inventor
Masahiro Shibagaki
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16473079A priority Critical patent/JPS5687667A/ja
Publication of JPS5687667A publication Critical patent/JPS5687667A/ja
Publication of JPS6225757B2 publication Critical patent/JPS6225757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
JP16473079A 1979-12-20 1979-12-20 Reactive ion etching method Granted JPS5687667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16473079A JPS5687667A (en) 1979-12-20 1979-12-20 Reactive ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16473079A JPS5687667A (en) 1979-12-20 1979-12-20 Reactive ion etching method

Publications (2)

Publication Number Publication Date
JPS5687667A true JPS5687667A (en) 1981-07-16
JPS6225757B2 JPS6225757B2 (ko) 1987-06-04

Family

ID=15798805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16473079A Granted JPS5687667A (en) 1979-12-20 1979-12-20 Reactive ion etching method

Country Status (1)

Country Link
JP (1) JPS5687667A (ko)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144542A (en) * 1980-03-17 1981-11-10 Ibm Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon
US4431473A (en) * 1981-07-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha RIE Apparatus utilizing a shielded magnetron to enhance etching
JPS61174633A (ja) * 1985-01-29 1986-08-06 Ulvac Corp スパッタエッチング装置
JPS6380535A (ja) * 1986-09-24 1988-04-11 Tokyo Electron Ltd プラズマ処理装置
JPS63179522A (ja) * 1987-01-21 1988-07-23 Tokyo Electron Ltd アツシング装置
JPS6489518A (en) * 1987-09-30 1989-04-04 Nec Corp Parallel flat board electrode type plasma etching device
JPH01227438A (ja) * 1988-03-07 1989-09-11 Tokyo Electron Ltd 半導体基板用載置台
JPH03138381A (ja) * 1989-10-20 1991-06-12 Ibiden Co Ltd プラズマエッチング用電極板
EP0458205A2 (en) * 1990-05-21 1991-11-27 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion and method of forming same
JPH0425230U (ko) * 1990-06-25 1992-02-28
US5268200A (en) * 1990-05-21 1993-12-07 Applied Materials, Inc. Method of forming plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
JPH06204179A (ja) * 1992-10-27 1994-07-22 Tokyo Electron Ltd プラズマ処理方法
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP2002520835A (ja) * 1998-07-13 2002-07-09 エーケーティー株式会社 処理装置用ガス分配プレート
US10262834B2 (en) 2009-10-13 2019-04-16 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144542A (en) * 1980-03-17 1981-11-10 Ibm Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon
US4431473A (en) * 1981-07-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha RIE Apparatus utilizing a shielded magnetron to enhance etching
JPH0531294B2 (ko) * 1985-01-29 1993-05-12 Ulvac Corp
JPS61174633A (ja) * 1985-01-29 1986-08-06 Ulvac Corp スパッタエッチング装置
JPS6380535A (ja) * 1986-09-24 1988-04-11 Tokyo Electron Ltd プラズマ処理装置
JPS63179522A (ja) * 1987-01-21 1988-07-23 Tokyo Electron Ltd アツシング装置
JPS6489518A (en) * 1987-09-30 1989-04-04 Nec Corp Parallel flat board electrode type plasma etching device
JPH01227438A (ja) * 1988-03-07 1989-09-11 Tokyo Electron Ltd 半導体基板用載置台
JPH03138381A (ja) * 1989-10-20 1991-06-12 Ibiden Co Ltd プラズマエッチング用電極板
EP0458205A2 (en) * 1990-05-21 1991-11-27 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion and method of forming same
US5268200A (en) * 1990-05-21 1993-12-07 Applied Materials, Inc. Method of forming plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
JPH0425230U (ko) * 1990-06-25 1992-02-28
JPH06204179A (ja) * 1992-10-27 1994-07-22 Tokyo Electron Ltd プラズマ処理方法
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP2002520835A (ja) * 1998-07-13 2002-07-09 エーケーティー株式会社 処理装置用ガス分配プレート
US10262834B2 (en) 2009-10-13 2019-04-16 Lam Research Corporation Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly

Also Published As

Publication number Publication date
JPS6225757B2 (ko) 1987-06-04

Similar Documents

Publication Publication Date Title
ATE45836T1 (de) Materialien und verfahren zum plasmaaetzen von oxyden und nitriden von silizium.
JPS5687667A (en) Reactive ion etching method
JPS5684476A (en) Etching method of gas plasma
KR950034575A (ko) 텍스처 포커스링을 사용하는 플라즈마 가공장치
JPS55154582A (en) Gas plasma etching method
EP0395017A3 (en) Plasma etching method
JPS5368171A (en) Method and apparatus for plasma treatment
JPS56122129A (en) Manufacture of semiconductor device
JPS5721813A (en) Forming method for film
JPS5715424A (en) Dry etching method
JPS57202726A (en) Manufacture of semiconductor device
JPS56100422A (en) Plasma etching method
JPS5745339A (en) Production of deposited film
JPS5731140A (en) Etching method by reactive ion
JPS5710629A (en) Plasma treatment of hollow body
JPS5666038A (en) Formation of micro-pattern
JPS5779620A (en) Plasma etching process
JPS5667925A (en) Plasma etching method
JPS5547381A (en) Plasma etching method
JPS5669374A (en) Dry etching method
JPS57194532A (en) Selective etching for organic high molecule coupling substance
JPS5613481A (en) Etching apparatus
JPS5533090A (en) Etching method
JPS56101745A (en) Formation of microminiature electrode
JPS57154833A (en) Etching method by reactive ion