JPH0425230U - - Google Patents
Info
- Publication number
- JPH0425230U JPH0425230U JP6733090U JP6733090U JPH0425230U JP H0425230 U JPH0425230 U JP H0425230U JP 6733090 U JP6733090 U JP 6733090U JP 6733090 U JP6733090 U JP 6733090U JP H0425230 U JPH0425230 U JP H0425230U
- Authority
- JP
- Japan
- Prior art keywords
- sample
- view
- etching device
- plasma
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6733090U JPH0425230U (ko) | 1990-06-25 | 1990-06-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6733090U JPH0425230U (ko) | 1990-06-25 | 1990-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0425230U true JPH0425230U (ko) | 1992-02-28 |
Family
ID=31600809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6733090U Pending JPH0425230U (ko) | 1990-06-25 | 1990-06-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0425230U (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112165A (ja) * | 1992-09-29 | 1994-04-22 | Tokyo Ohka Kogyo Co Ltd | プラズマ処理装置 |
| JPH10321605A (ja) * | 1997-05-20 | 1998-12-04 | Tokyo Electron Ltd | プラズマ処理装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687667A (en) * | 1979-12-20 | 1981-07-16 | Toshiba Corp | Reactive ion etching method |
| JPS62183530A (ja) * | 1986-02-07 | 1987-08-11 | Nec Kyushu Ltd | ドライエツチング装置 |
| JPS62252941A (ja) * | 1986-04-25 | 1987-11-04 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
| JPS63205914A (ja) * | 1987-02-23 | 1988-08-25 | Hitachi Ltd | 半導体製造装置 |
| JPH01272769A (ja) * | 1987-12-30 | 1989-10-31 | Texas Instr Japan Ltd | プラズマ発生装置 |
-
1990
- 1990-06-25 JP JP6733090U patent/JPH0425230U/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687667A (en) * | 1979-12-20 | 1981-07-16 | Toshiba Corp | Reactive ion etching method |
| JPS62183530A (ja) * | 1986-02-07 | 1987-08-11 | Nec Kyushu Ltd | ドライエツチング装置 |
| JPS62252941A (ja) * | 1986-04-25 | 1987-11-04 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
| JPS63205914A (ja) * | 1987-02-23 | 1988-08-25 | Hitachi Ltd | 半導体製造装置 |
| JPH01272769A (ja) * | 1987-12-30 | 1989-10-31 | Texas Instr Japan Ltd | プラズマ発生装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112165A (ja) * | 1992-09-29 | 1994-04-22 | Tokyo Ohka Kogyo Co Ltd | プラズマ処理装置 |
| JPH10321605A (ja) * | 1997-05-20 | 1998-12-04 | Tokyo Electron Ltd | プラズマ処理装置 |